LIGITEK LPT3323 Npn silicon phototransistor led lamp Datasheet

LPT3323
NPN SILICON PHOTOTRANSISTOR LED LAMPS
SERIES
Package Dimension
Features
. High illumination sensitivity
. Stable characteristics
. Spectrally and mechanically
matched with IR emitter
5.0 5.9
7.6 8.6
Description
0.5
TYP
The LPT3323 series are silicon nitride
passivated NPN planar
phototransistors with exceptionally
stable characteristics and high
illumination sensitivity the cases of
LPT3323 are encapsulated in
water clear plastic T1 3/4 package
individuallt
12.5MIN
1.0MIN
1.EMITTER
2.COLLECTOR
2.3TYP
1
2
Note:1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted
2.Specifications are subject to change without notice
•MAXIMUM RATINGS(Ta=25℃)
PARAMETER
MAXIMUM RATINGS
UNIT
100
mw
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Power Dissipation
Operating Temperature
-50℃ TO +100℃
Storage Temperature
-50℃ TO +100℃
260℃ for 5 seconds
Lead Soldering Temperature(1.6mm From Body)
•ELECTRICAL CHARACTERISTICS(Ta=25℃)
Typ.
UNIT
TEST CONDITION
30
V
Ic=1mA
Ee=0mw/c㎡
5
V
IE=100μA
Ee=0mw/c㎡
V
Ic=0.5mA
Ee=20mw/c㎡
PARAMETER
SYMBOL
Min.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Collector
Breakdown Voltage
V(BR)ECO
Collector-Emitter
Saturation Voltage
VCE(sat)
Max.
0.4
Rise Time
Tr
5
μs
Fall Time
Tf
5
μs
Collector Dark
Current
On State Collector
Current
ICEO
Ip(on)
100
nA
1
2
mA
2
4
mA
4
8
mA
8
DOC. NO : QW0905-LPT3323
VCE =30V
IC=800μA,RL=1K Ω
VCE =10V
Ee=0mw/c㎡
VCE =5v
Ee=1mw/c㎡
λP=940nm
mA
REV. : C
DATE : 18 - Aug - 2005
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