BCX56 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Small Flat Package General Purpose Application 4 1 CLASSIFICATION OF hFE(2) Product-Rank BCX56-10 BCX56-16 Range 63~160 100~250 E C B D MARKING F REF. PACKAGE INFORMATION Package MPQ SOT-89 A B C D E F Base Leader Size 1K Emitter 7 inch K J = Date Code G H Collector BCP56 2 B C 3 E A L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 REF. G H J K L ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current ICM 1 A Collector Power Dissipation PC 1.2 W RθJA 250 °C / W TJ, TSTG -65~150 °C Maximum Junction to Ambient Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO 100 - - V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=10μA, IC=0 Collector Cut-Off Current ICBO - - 0.1 μA VCB=30V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 μA VEB=5V, IC=0 63 - - 63 - 250 VCE=2V, IC=150mA 40 - - VCE=2V, IC=500mA fT 100 - - Collector-Emitter Saturation voltage VCE(sat) - - 500 Base-emitter voltage VBE(ON) - - 1 BCX56 DC Current Gain BCX56-10 hFE BCX56-16 Transition frequency http://www.SeCoSGmbH.com/ 25-Oct-2012 Rev. B Test conditions VCE=2V, IC=5mA MHz VCE=5V, IC=10mA mV IC=500mA, IB=50mA V VCE=2V, IC=500mA Any changes of specification will not be informed individually. Page 1 of 2 BCX56 Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Oct-2012 Rev. B Any changes of specification will not be informed individually. Page 2 of 2