SPICE MODEL: BS870 BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low On-Resistance Low Gate Threshold Voltage SOT-23 A Low Input Capacitance Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 G D 0.89 1.03 H E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 D Fast Switching Speed Low Input/Output Leakage B C Lead Free/RoHS Compliant (Note 2) G TOP VIEW S Mechanical Data · · D E Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · K J M L J 0.013 0.10 K 0.903 1.10 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). L 0.45 0.61 M 0.085 0.180 Marking (See Page 2): K70 a 0° 8° Terminal Connections: See Diagram Drain Terminals: Solderable per MIL-STD-202, Method 208 Ordering & Date Code Information: See Page 2 All Dimensions in mm Gate Weight: 0.008 grams (approximate) Source Maximum Ratings @ TA = 25°C unless otherwise specified Symbol BS870 Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 1) Continuous ID 250 mA Pd 300 mW RqJA 417 K/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS11302 Rev. 11 - 2 1 of 4 www.diodes.com BS870 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 80 ¾ V VGS = 0V, ID = 100mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 0.5 µA VDS = 25V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±15V, VDS = 0V OFF CHARACTERISTICS (Note 3) ON CHARACTERISTICS (Note 3) VGS(th) 1.0 2.0 3.0 V VDS = VGS, ID = 250mA RDS (ON) ¾ 3.5 5.0 W VGS = 10V, ID = 0.2A ID(ON) ¾ 1.0 0.5 A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 50 pF Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ 2.0 20 ns Turn-Off Delay Time tD(OFF) ¾ 5.0 20 ns Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Ordering Information Notes: VES = 10V, RL = 150W, VDS = 10V, RD = 100W (Note 4) Device Packaging Shipping BS870-7-F SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information K70 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D K70 Date Code Key DS11302 Rev. 11 - 2 2 of 4 www.diodes.com BS870 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 0.6 10V Tj = 25°C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 5.5V 5.0V 0.4 0.2 2.1V 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 1.5 VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 5 4 ID = 500mA ID = 50mA 3 2 1 0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 5, Max Power Dissipation vs Ambient Temperature DS11302 Rev. 11 - 2 3 of 4 www.diodes.com BS870 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS11302 Rev. 11 - 2 4 of 4 www.diodes.com BS870