Vishay BPV22F Silicon pin photodiode, rohs compliant Datasheet

BPV22F
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
94 8633
• Angle of half sensitivity: ϕ = ± 60°
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
DESCRIPTION
• High speed detector for infrared radiation
BPV22F is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwdith is matched
with 900 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
PRODUCT SUMMARY
Ira (µA)
ϕ (deg)
λ0.5 (nm)
80
± 60
870 to 1050
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
COMPONENT
BPV22F
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPV22F
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
60
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t≤5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
Junction temperature
Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: [email protected]
Document Number: 81508
Rev. 1.5, 08-Sep-08
BPV22F
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
1
1.3
V
2
30
nA
IF = 50 mA
VF
IR = 100 µA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
VR = 0 V, f = 1 MHz, E = 0
CD
70
VR= 12 V, f = 1 MHz
RS
400
Ω
Ee = 1 mW/cm2, λ = 950 nm
Vo
370
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
75
µA
80
µA
TKIra
0.1
%/K
VR = 5 V, λ = 870 nm
s(λ)
0.35
A/W
VR = 5 V, λ = 950 nm
s(λ)
0.6
A/W
Angle of half sensitivity
ϕ
± 60
deg
Wavelength of peak sensitivity
λp
950
nm
λ0.5
870 to 1050
nm
λ = 950 nm
η
90
%
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√ Hz
Detectivity
VR = 10 V, λ = 950 nm
D*
6 x 1012
cm√Hz/W
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
VR = 12 V, RL = 1 kΩ, λ = 870 nm
fc
4
MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm
fc
1
MHz
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Open circuit voltage
Ee
Reverse light current
= 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ee = 1
Temperature coefficient of Ira
Absolute spectral sensitivity
λ = 950 nm,
VR = 10 V
mW/cm2,
Range of spectral bandwidth
Quantum efficiency
Cut-off frequency
60
V
55
Ira
pF
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Document Number: 81508
Rev. 1.5, 08-Sep-08
1.4
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: [email protected]
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BPV22F
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
S ( ) rel - Relative Spectral Sensitivity
I ra - Reverse Light Current (µA)
1000
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
1.0
0.8
0.6
0.4
0.2
0
750
10
1
E e - Irradiance (mW/cm2)
94 8411
1.2
850
Fig. 3 - Reverse Light Current vs. Irradiance
950
1150
1050
- Wavelength (nm)
94 8408
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10 °
20 °
30°
0.5 mW/cm2
λ = 950 nm
2
0.2 mW/cm
10
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.02 mW/cm2
1
0.1
1
10
100
VR - Reverse Voltage (V)
94 8412
ϕ - Angular Displacement
Srel - Relative Sensitivity
I ra - Reverse Light Current (µA)
1 mW/cm2
0.6
0.4
0.2
0
94 8413
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
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352
For technical questions, contact: [email protected]
Document Number: 81508
Rev. 1.5, 08-Sep-08
BPV22F
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
5
± 0.15
3.2
± 0.2
(2.4)
± 0.2
± 0.3
6
R 2.25 (sphere)
18.8
± 0.5
8.6
± 0.3
< 0.7
2.5
4.5
+ 0.1
- 0.3
0.65
+ 0.1
- 0.2
0.1
3.4 +- 0.3
Area not plane
A
C
0.45
+ 0.2
- 0.1
2.54 nom.
0.4 + 0.15
1.1
± 0.2
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
95 11475
Document Number: 81508
Rev. 1.5, 08-Sep-08
For technical questions, contact: [email protected]
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353
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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