NEC NE85002 2 watt c-band power gaas mesfet Datasheet

2 WATT C-BAND
POWER GaAs MESFET
FEATURES
NE85002
SERIES
SELECTION CHART
TYPICAL PERFORMANCE
FREQUENCY
GL
RANGE
(dBm)
(GHz)
(dB)
• CLASS A OPERATION
PART
NUMBER
• HIGH EFFICIENCY: ηADD ≥ 39% TYP
POUT
• BROADBAND CAPABILITY
• PACKAGE OPTIONS:
Chip
Hermetic Package
• PARTIALLY MATCHED INPUT FOR PACKAGED
DEVICES
NE8500200
33.8 MIN
2.0 to 10
8.0 MIN
NE8500295-4
33.8 MIN
3.5 to 4.5
10.5 MIN
NE8500295-6
33.8 MIN
5.5 to 6.5
9.5 MIN
NE8500295-8
33.5 MIN
7.5 to 8.5
8.0 MIN
• PROVEN RELIABILITY
DESCRIPTION
The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz
frequency range with three different Class A, 2 W partially
matched devices. Each packaged device has an input lumped
element matching network.
The NE8500200 is the six-cell recessed gate chip used in the
"95" package. The device incorporates a Ti-Al gate structure,
SiO2 glassivation and plated heat sink technology.
ELECTRICAL CHARACTERISTICS (TC = 25°C)
NE85002001
00 (CHIP)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
IDSS
PARAMETERS AND CONDITIONS UNITS MIN
Saturated Drain Current
VDS = 2.5 V, VGS = 0 V
TYP MAX
950
1900
950
1900
-3.0
-1.0
-3.0
-1.0
-3.0
-1.0
-3.0
-1.0
mS
600
V
18
mA
-2.4
IGS
Gate to Source Current, VDS = 10 V,
IDSQ = 450 mA, POUT = PTEST
RTH
Thermal Resistance (Channel-to-Case) °C/W
ηADD3
TYP MAX MIN
1900
V
GL
TYP MAX MIN
950
Transconductance
VDS = 2.5 V, ID = IDSS
Power Output at Test Point
VDS = 10 V, IDS = 450 mA set
PIN = 27.0 dBm
PIN = 24.5 dBm
PIN = 25.5 dBm
TYP MAX MIN
1900
gm
PTEST2
NE8500295-8
95
950
Pinch-off Voltage
VDS = 2.5 V, ID = 8 mA
Drain-Gate Breakdown Voltage
IGD = 8 mA
NE8500295-6
95
mA
VP
BVGDO
NE8500295-4
95
33.8
Linear Gain
VDS = 10 V, IDS = 450 mA
dB
8.0
Power Added Efficiency
at PTEST
%
600
18
2.4
10
dBm
dBm
dBm
600
600
18
-2.4
2.4
15
18
-2.4
2.4
15
-2.4
2.4
15
15
33.5
33.8
33.8
Notes:
1. Six-cell chip: all cells are used. RF performance of the chip is
determined by packaging 10 chips per wafer. Wafer rejection
criteria for standard devices are 2 rejects per 10 samples.
2. This is a production test. Test frequencies are: -4 @ 4.2 GHz,
-6 @ 6.5 GHz, -8 and NE8500200 @ 8.5 GHz.
9.0
42
10.5
9.5
47
8.0
45
39
POUT - PIN
3. ηADD = VDS - ID x 100%
California Eastern Laboratories
NE85002 SERIES
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
RECOMMENDED
OPERATING CONDITIONS
VDS
Drain to Source Voltage
V
15
PARAMETERS
UNITS
MIN
VGD
Gate to Drain
V
-18
SYMBOLS
VDS
Drain to Source Voltage
V
9
VGS
Gate to Source Voltage
V
-12
TC
Channel Temperature
°C
ID
Drain Current
A
2.5
GCOMP
IG
Gate Current
mA
13
Rg
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
Total power Dissipation
W
13
PT
Input Power
TYP
10
130
dBCOMP
Gate Resistance
3
kΩ
1
NE8500295-6
LARGE SIGNAL IMPEDANCES
FREQUENCY
GHz
ZIN
Ω
ZOUT
Ω
5.90
13.16 - j44.75
11.48 - j21.52
6.20
22.77 - j59.68
16.16 - j25.02
6.40
149.70 - j73.98
23.44 - j40.36
6.50
43.58 - j56.13
12.87 - j11.86
ZIN is the impedance of the input matching circuit as seen by the gate.
ZOUT is the impedance of the output matching circuit as seen by the
drain.
TYPICAL PERFORMANCE CURVE (TC = 25°C)
POWER DERATING CURVE
OUTPUT POWER vs. INPUT POWER
40
Output Power, POUT (dBm)
Total Power Dissipation, PT (W)
12
8
4
0
30
-4
-6
-8
20
10
0
0
50
100
150
Case Temperature, TC (°C)
200
0
5
10
15
20
25
MAX
30
Input Power, PIN (dBm)
35
40
2
NE85002 SERIES
TYPICAL SCATTERING PARAMETERS (TC = 25°C)
+90˚
+60˚
+120˚
S22
10 GHz
+30˚
S21
0.1 GHz
+150˚
S21
10 GHz
±180˚
S12
0.1 GHz
0˚
S22
0.1 GHz
-30˚
-150˚
S11
10 GHz
S11
0.1 GHz
S12
10 GHz
-60˚
-120˚
-90˚
NE8500295-4
VDS = 10 V, IDS = 450 mA
FREQUENCY
S11
(GHz)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
S21
MAG
ANG
1.003
0.971
0.972
0.987
0.976
0.965
0.927
0.886
0.843
0.882
0.929
0.945
0.937
0.929
0.919
0.905
0.883
0.843
0.779
0.723
0.683
-81.900
-161.600
-179.600
169.800
160.100
150.700
145.700
139.600
134.633
129.600
118.200
106.500
96.800
87.900
76.700
60.100
34.100
0.700
-29.300
-59.300
-97.000
MAG
S12
ANG
MAG
14.230 135.700
3.768
90.400
2.006
69.100
1.479
51.400
1.255
34.300
1.205
15.900
1.149
-2.500
1.343
-30.300
1.486
-73.367
1.233 -126.500
0.738 -166.200
0.455 166.100
0.303 143.700
0.227 124.600
0.190 104.500
0.186
80.200
0.187
47.000
0.174
8.700
0.144
-26.400
0.124
-51.800
0.116
-74.600
0.009
0.010
0.012
0.013
0.017
0.018
0.018
0.020
0.014
0.021
0.037
0.047
0.054
0.058
0.069
0.086
0.117
0.142
0.141
0.133
0.114
S22
ANG
-14.900
26.000
19.700
27.200
27.600
18.300
20.200
11.800
20.367
76.600
54.400
38.400
25.900
15.100
7.600
0.300
-18.200
-44.800
-74.800
-95.500
-110.500
K
MAG
ANG
0.428
0.414
0.429
0.457
0.479
0.514
0.588
0.700
0.864
0.931
0.838
0.785
0.769
0.763
0.756
0.725
0.676
0.629
0.623
0.647
0.661
-158.600
-173.100
-178.200
-178.700
179.500
177.400
-176.700
-176.000
173.900
153.400
137.500
127.500
121.100
116.400
112.300
107.100
96.600
80.500
66.100
55.900
52.500
MAG1
(dB)
-0.384
0.655
0.923
0.521
0.804
0.976
1.876
1.464
1.049
-0.147
-0.011
0.325
1.053
1.876
2.389
2.654
2.868
3.794
6.295
8.799
11.714
31.990
25.761
22.231
20.560
18.682
18.257
12.657
14.232
18.899
17.687
12.999
9.859
6.087
0.532
-2.190
-3.736
-5.411
-7.842
-10.881
-12.745
-13.614
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE85002 SERIES
TYPICAL SCATTERING PARAMETERS (TC = 25°C)
+90˚
+60˚
+120˚
+30˚
S22
10 GHz
+150˚
S21
0.1 GHz
S21
10 GHz
±180˚
S22
0.1 GHz
S11
10 GHz
0˚
S12
0.1 GHz
-30˚
-150˚
S12
10 GHz
S11
0.1 GHz
-60˚
-120˚
-90˚
NE8500295-6
VDS = 10 V, IDS = 450 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.963
0.952
0.947
0.963
0.956
0.949
0.948
0.898
0.876
0.847
0.813
0.737
0.560
0.264
0.344
0.539
0.623
0.637
0.610
0.574
0.514
-59.200
-149.100
-173.800
172.900
161.800
150.900
140.700
138.500
128.200
116.000
101.800
85.400
69.800
73.200
127.700
117.600
90.700
53.500
16.000
-16.900
-55.800
MAG
S12
ANG
16.698 149.400
5.714
97.600
3.033
74.200
2.152
56.400
1.701
41.000
1.472
26.000
1.328
11.300
1.164
0.700
1.168
-13.300
1.278
-28.700
1.432
-47.900
1.648
-71.000
1.926
-99.800
2.118 -137.200
1.924 -176.300
1.625 151.000
1.406 119.500
1.163
84.600
0.868
52.600
0.676
25.900
0.561
-0.600
S22
MAG
ANG
MAG
0.003
0.016
0.017
0.018
0.021
0.022
0.029
0.031
0.036
0.041
0.048
0.054
0.057
0.046
0.023
0.013
0.038
0.075
0.096
0.099
0.090
29.700
22.800
20.000
17.400
22.200
21.200
20.600
17.400
11.000
4.800
-6.900
-23.900
-47.400
-82.700
-123.600
99.500
36.300
-1.900
-41.300
-69.300
-88.500
0.373
0.463
0.485
0.512
0.532
0.556
0.578
0.605
0.607
0.595
0.616
0.664
0.757
0.871
0.920
0.884
0.838
0.779
0.718
0.693
0.673
K
ANG
-169.500
-171.200
-179.300
177.700
173.900
172.700
170.500
168.000
163.200
158.400
152.300
146.000
140.000
131.200
120.200
110.200
95.900
74.700
56.000
47.000
43.200
MAG1
(dB)
0.408
0.377
0.769
0.653
0.859
1.018
0.806
1.547
1.554
1.529
1.250
1.072
0.966
1.101
1.866
3.241
1.283
1.035
1.653
2.524
3.931
37.455
25.528
22.514
20.776
19.085
17.440
16.608
11.388
10.727
10.646
11.735
13.203
15.288
14.693
13.858
12.959
12.486
10.759
4.837
1.493
-0.936
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE85002 SERIES
TYPICAL SCATTERING PARAMETERS (TC = 25°C)
+90˚
+60˚
+120˚
+30˚
+150˚
S22
10 GHz
S21
0.1 GHz
S21
10 GHz
±180˚
S12
10 GHz
-150˚
S11
0.1 GHz
0˚
S12
0.1 GHz
S11
10 GHz
S22
0.1 GHz
-30˚
-60˚
-120˚
-90˚
NE8500295-8
VDS = 10 V, IDS = 450 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.971
0.937
0.934
0.947
0.939
0.921
0.906
0.887
0.866
0.836
0.805
0.734
0.587
0.303
0.116
0.394
0.536
0.570
0.497
0.354
0.288
-54.800
-146.300
-174.000
170.900
158.300
153.800
145.400
137.000
126.200
113.900
98.800
80.200
57.400
23.500
-152.800
158.700
126.700
91.000
45.200
3.800
-34.500
MAG
S12
ANG
17.977 150.900
6.354
98.200
3.391
74.500
2.382
56.200
1.869
40.300
1.473
27.700
1.335
15.900
1.272
2.700
1.252 -11.100
1.343 -25.500
1.483 -43.600
1.658 -64.900
1.893 -90.600
2.124 -122.700
2.078 -159.400
1.824 167.500
1.587 137.200
1.413 103.500
1.105
66.600
0.787
38.600
0.622
17.000
S22
K
MAG
ANG
MAG
ANG
0.004
0.016
0.018
0.020
0.026
0.023
0.027
0.034
0.041
0.044
0.056
0.065
0.073
0.075
0.063
0.042
0.025
0.033
0.069
0.067
0.068
35.400
24.000
22.300
20.800
28.100
22.700
20.900
19.900
10.200
6.000
-4.100
-18.900
-41.500
-69.900
-101.500
-134.100
165.800
49.500
-26.200
-59.800
-86.200
0.427
0.464
0.492
0.513
0.534
0.573
0.592
0.603
0.602
0.583
0.592
0.628
0.695
0.788
0.874
0.883
0.858
0.843
0.773
0.747
0.712
-155.900
-172.300
-178.900
177.400
173.300
169.500
168.100
165.700
160.300
155.200
149.200
142.800
138.700
133.400
125.700
115.900
102.200
81.500
59.800
51.700
46.800
MAG1
(dB)
0.030
0.452
0.821
0.811
0.954
1.495
1.570
1.497
1.423
1.556
1.211
1.074
0.948
0.925
1.015
1.421
2.264
1.665
1.861
3.631
5.336
36.527
25.989
22.751
20.759
18.566
13.906
12.501
11.563
10.984
10.456
11.454
12.409
14.138
14.521
14.431
12.522
11.697
11.551
6.692
2.173
-0.631
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE85002 SERIES
RF TEST CIRCUIT
S1
GATE
RF
POWER
SOURCE
S2
BIAS
SUPPLY
1 KΩ
20dB
DIRECTIONAL
COUPLER
BIAS
TEE
Circulator
10 dB
ATTN.
TUNER
D.U.T.
POWER
METER
POWER
METER
DRAIN
VDS = 10 V
ID = 450 mA
TUNER
BIASING PROCEDURE
Turn on the power supply.
Make sure its voltage is 0 V.
Turn on S1 and S2. Apply
VGS = -5, then apply VDS = 10 V.
Decrease VGS to obtain the
required drain current, ID. Apply
the RF input and adjust the gate
voltage to maintain the desired
drain current. Do not exceed a
gate current of 10 mA
(IG = 10 mA max).
BIAS
TEE
30 dB
ATTN.
OUTLINE DIMENSIONS AND HANDLING
NE8500200 (CHIP)
(Units in µm)
PACKAGE OUTLINE 95
(Units in mm)
100
240
110
φ2.5±0.3
2 PLACES
100
0.7±0.1
4.0 MIN
GATE
SOURCE
640
5.9±0.2
100
90
1800
100
DRAIN
+.06
0.1 -.02
6.5±0.3
14.0±0.15
18.0±0.5
DIE ATTACHMENT
4.5 MAX
2.1±0.15
0.2 MAX
7.2±0.2
1.2
Die attach can be accomplished with either Au-Ge (390±10°C) or
Au-Sn (290 ± 10°C) preforms in a forming gas environment. Epoxy
die attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semihard fold wire (3-8% elongation) 30 microns or less in diameter.
The source should be connected with gold ribbon or mesh.
Bonding should be performed with a wedge tip that has a taper of
approximately 15°. Die attach and bonding time should be kept to
a minimum. As a general rule, the bonding operation should be
kept within a 300°C - 10 minute curve. If longer periods are
required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment. The chip
channel is glassivated for mechanical protection only and does not
preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources
of surge voltage and should be properly grounded at all times. All
test and handling equipment should be grounded to minimize the
possibilities of static discharge.
See AN-1001 Recommended Handling Procedure for Microwave
Transistor & MMIC Chips for additional infromation.
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
06/26/2002
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