Vishay BZT03D220 Silicon z-diodes and transient voltage suppressor Datasheet

BZT03D...
Vishay Telefunken
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D Glass passivated junction
D Hermetically sealed package
D Clamping time in picoseconds
Applications
94 9539
Medium power voltage regulators and
medium power transient suppression circuits
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm, TL=25°C
Tamb=25°C
Type
tp=100ms, Tj=25°C
Symbol
PV
PV
PZRM
PZSM
Tj
Tstg
Value
3.25
1.3
10
600
175
–65...+175
Unit
W
W
W
W
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
46
100
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Document Number 85600
Rev. 2, 01-Apr-99
Test Conditions
IF=0.5A
Type
Symbol
VF
Min
Typ
Max
1.2
Unit
V
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BZT03D...
Vishay Telefunken
Type
BZT03D...
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
Min.
5.6
6.1
6.75
7.4
8.2
9.0
9.9
10.8
11.7
13.5
14.4
16.2
18.0
29.8
21.6
24.3
27
29.7
32.4
35.1
38.7
42.3
45.9
50.4
55.8
61.2
67.5
73.8
81.9
90
99
108
117
135
144
162
180
198
216
243
VZ
V
Typ.
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
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rzj
W
Max.
6.8
7.5
8.25
9.0
10.0
11.0
12.1
13.2
14.3
16.5
17.6
19.8
22.0
24.2
26.4
29.7
33
36.3
39.6
42.9
47.3
51.7
56.1
61.6
68.2
74.8
82.5
90.2
100
110
121
132
143
165
176
198
220
242
264
297
Typ.
1
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
350
400
450
and
Max.
2
2
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
750
850
1000
TKVZ
at
%/K
Min.
Max.
0
0.07
0
0.07
0
0.07
0.03
0.08
0.03
0.08
0.05
0.09
0.05
0.10
0.05
0.10
0.05
0.10
0.05
0.10
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.07
0.12
0.07
0.12
0.07
0.12
0.07
0.12
0.08
0.13
0.08
0.13
0.08
0.13
0.08
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
IZ
mA
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
2
2
2
IR at
mA
Max.
1500
1000
750
600
20
10
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
VR
4.4
4.8
5.3
5.9
6.5
7.1
7.9
8.6
9.3
10.6
11.6
12.6
14.4
15.8
17.2
19.4
21.5
23.5
25.8
28
31
33.5
36.5
40
44.5
49
54
59
65
71
79
86
93
106
116
126
144
158
172
194
Document Number 85600
Rev. 2, 01-Apr-99
BZT03D...
Vishay Telefunken
Type
BZT03D...
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
1)
Clamping at
V(CL)R 1)
IRSM
V
A
Max.
9.5
34.0
10.5
31.0
11.6
26.5
12.6
24.4
13.7
22.7
15.2
20.3
16.2
19.1
17.5
17.7
19.1
15.9
21.8
14.4
23.4
13.1
26.3
11.7
29.2
10.6
31.9
9.7
34.6
8.9
39
7.9
43.5
7.1
47.5
6.5
51.5
6.0
56
5.5
62
4.9
67.5
4.6
73
4.2
81
3.8
89
3.5
97
3.2
107
2.9
117
2.6
130
2.4
143
2.2
157
2.0
172
1.8
187
1.6
213
1.5
229
1.3
256
1.2
284
1.1
314
1.0
364
0.9
388
0.8
Stand–off at
IR
VR 2)
mA
V
Max.
3000
4.8
2000
5.3
1500
5.9
1200
6.5
50
7.1
20
7.9
5
8.6
5
9.3
5
10.6
5
11.6
5
12.6
5
14.4
5
15.8
5
17.2
5
19.4
5
21.5
5
23.5
5
25.8
5
28
5
31
5
33.5
5
36.5
5
40
5
44.5
5
49
5
54
5
59
5
65
5
71
5
79
5
86
5
93
5
106
5
116
5
126
5
144
5
158
5
172
5
194
5
215
10/1000 exp. falling pulse tp = 1000 ms down to 50%
Document Number 85600
Rev. 2, 01-Apr-99
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BZT03D...
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
3.0
3
25
2.5
I F – Forward Current ( A )
50
50
2.0
Tj = 25°C
1.5
1.0
0.5
0
7
2
0
94 9086a
Figure 1. Epoxy glass hard tissue, board
thickness 1.5 mm, RthJA 100 K/W
x
2.0
1.5
Figure 3. Forward Current vs. Forward Voltage
l
l
PZSM – Non-Repetitive Surge Power
Dissipation ( W )
Ptot – Total Power Dissipation ( W )
1.0
10000
4
l=10mm
3
15mm
TL=constant
2
20mm
1
see Fig.1
Tj = 25°C
1000
100
10
0.01
0
0
94 9584
0.5
VF – Forward Voltage ( V )
94 9585
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
1
10
100
tp – Pulse Length ( ms )
94 9586
Figure 2. Total Power Dissipation vs.
Ambient Temperature
0.1
Figure 4. Non Repetitive Surge Power Dissipation vs.
Pulse Length
Dimensions in mm
∅ 3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
Cathode Identification
26 min.
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4.2 max.
94 9538
technical drawings
according to DIN
specifications
∅ 0.82 max.
26 min.
Document Number 85600
Rev. 2, 01-Apr-99
BZT03D...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85600
Rev. 2, 01-Apr-99
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