ROHM RB550EA_11

Schottky Barrier Diode
RB550EA
Dimensions (Unit : mm)
Applications
Low current rectification
Land size figure (Unit : mm)
0.8MIN.
(5)
0.16±0.1
0.06
dimension
(4)
Features
1)Small mold type.(TSMD5)
2)Low VF, Low IR
1.6
+0.2
-0.1
2.8±0.2
0.45 0.35
0~0.1
(2)
0.95
0.33±0.03
(3)
0.7±0.1
0.95
TSMD5
1.9
0.85±0.1
1.9±0.2
Construction
Silicon Epitaxial Planer
0.95 0.95
0.3~0.6
3)High reliability
(1)
0.35 0.45
0.6
2.4
+0.1
0.4 -0.05 各リードとも同寸法
Each lead has same
1.0MIN.
2.9±0.1
1.0Max
Structure
ROHM : TSMD5
dot(year week factory) + day
Taping specifications (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Limits
30
0.7
12
150
40 to 150
3.2±0.08
8.0±0.2
3.2±0.08
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VR
Reverse voltage (DC)
Average rectified forwarfd current (*1)
Io
IFSM
Forward current surge peak (t=1msec)
Junction temperature
Tj
Storage temperature
Tstg
0~0.5
φ1.1±0.1
4.0±0.1
3.2±0.08
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
1.1±0.08
Unit
V
A
A
°C
°C
(*1)Rating of per diode.
Electrical characteristics (Ta=25°C, Rating of per diode.)
Parameter
Symbol
Min.
VF 1
Forward voltage
0.39
Typ.
Max.
Unit
Reverse current
IR1
IR2
-
0.45
1
5.0
0.49
30.00
50
V
μA
μA
ESD break down voltage
ESD
15
-
-
KV
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1/3
Conditions
IF=0.7A
VR=10V
VR=30V
C=100PF,R=1.5KΩ
Forward and reverse : 1 times
2011.05 - Rev.A
Data Sheet
RB550EA
100000
Ta=75℃
10000
Ta=150℃
Ta=25℃
Ta=-25℃
0.01
1000
Ta=75℃
100
10
Ta=25℃
1
Ta=-25℃
0.1
100
200
300
400
500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
600
10
15
20
25
1
30
0
470
460
450
20
15
10
AVE:3.141uA
5
180
170
160
150
140
130
120
100
IR DISPERSION MAP
Ct DISPERSION MAP
20
30
8.3ms
15
AVE:15.1A
10
5
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
REVERSE RECOVERY TIME:trr(ns)
30
20
AVE:149.9pF
110
0
VF DISPERSION MAP
15
10
AVE:8.3ns
5
0
0
Ifsm Ifsm
15
8.3ms 8.3ms
8.3ms
8.3ms
1cyc
1cyc
10
5
0
1
trr DISPERSION MAP
IFSM DISPERSION MAP
25
Ifsm
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
t
20
15
10
5
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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©2011 ROHM Co., Ltd. All rights reserved.
100
IM=10mA
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
Mounted on epoxy board
IF=0.2A
0.8
1ms
time
Rth(j-a)
300us
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
30
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
190
Ta=25℃
VR=30V
n=30pcs
25
440
25
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
30
REVERSE CURRENT:IR(nA)
Ta=25℃
IF=0.7A
n=30pcs
AVE:459.6mV
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
490
480
5
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
0.01
0.001
FORWARD VOLTAGE:VF(mV)
f=1MHz
Ta=125℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
0.1
1000
Ta=150℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
1
D=1/2
0.6
Sin(θ=180)
DC
0.4
0.2
10
0.001
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
1000
0
0.5
1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
1.5
2011.05 - Rev.A
Data Sheet
RB550EA
1.5
0A
0V
DC
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.8
0.6
D=1/2
0.4
DC
Sin(θ=180)
0.2
t
T
D=1/2
1
0.5
Sin(θ=180)
0
0
0
10
20
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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©2011 ROHM Co., Ltd. All rights reserved.
30
1.5
Io
VR
D=t/T
VR=15V
Tj=150℃
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
3/3
150
Sin(θ=180)
1
0.5
Io
0A
0V
t
T
0
0
DC
D=1/2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1
0
25
50
VR
D=t/T
VR=15V
Tj=150℃
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
2011.05 - Rev.A
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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R1120A