DIODES ZXMP4A16GTA

ZXMP4A16G
40V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
·
Low on-resistance
·
Fast switching speed
·
Low threshold
·
Low gate drive
·
SOT223 package
APPLICATIONS
·
DC-DC Converters
·
Disconnect switches
·
Audio output stages
·
Motor Control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP4A16GTA
7”
12mm
1000 units
ZXMP4A16GTC
13”
12mm
4000 units
Top View
DEVICE MARKING
· ZXMP
4A16
ISSUE 4 - JULY 2003
1
SEMICONDUCTORS
ZXMP4A16G
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
LIMIT
UNIT
V
Drain-Source Voltage
V DSS
-40
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain Current (V GS = -10V; T A =25°C) (b)
(V GS = -10V; T A =70°C) (b)
(V GS = -10V; T A =25°C) (a)
ID
-6.4
-5.1
-4.6
A
Pulsed Drain Current (c)
I DM
-21
A
(b)
IS
-5.2
A
Pulsed Source Current (Body Diode)(c)
I SM
-21
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
2.0
16
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Continuous Source Current (Body Diode)
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)
R θJA
62.5
°C/W
Junction to Ambient
(b)
R θJA
32.2
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 4 - JULY 2003
SEMICONDUCTORS
2
ZXMP4A16G
CHARACTERISTICS
ISSUE 4 - JULY 2003
3
SEMICONDUCTORS
ZXMP4A16G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-40
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
Input Capacitance
TYP.
MAX. UNIT CONDITIONS
STATIC
V
I D =-250µA, V GS =0V
-1
␮A
V DS =-40V, V GS =0V
100
nA
V
I =-250␮A, V DS = V GS
⍀
⍀
V GS =-10V, I D =-3.8A
V GS =-4.5V, I D =-2.9A
8.85
S
V DS =-15V,I D =-3.8A
C iss
1007
pF
Output Capacitance
C oss
130
pF
Reverse Transfer Capacitance
C rss
85
pF
Turn-On Delay Time
t d(on)
2.33
ns
Rise Time
tr
8.84
ns
Turn-Off Delay Time
t d(off)
29.18
ns
Fall Time
tf
12.54
ns
Gate Charge
Qg
13.6
nC
Total Gate Charge
Qg
26.1
nC
Gate-Source Charge
Q gs
2.8
nC
Gate-Drain Charge
Q gd
4.8
nC
V SD
-0.85
t rr
Q rr
DYNAMIC
-1.0
V GS =⫾20V, V DS =0V
0.060
0.100
D
(3)
SWITCHING
V DS =-20V, V GS =0V,
f=1MHz
(2)(3)
V DD =-20V, I D =-1A
R G 6.0⍀, V GS =-10V
@
V DS =-20V,V GS =-5V,
I D =-3.8A
V DS =-20V,V GS =-10V,
I D =-3.8A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-1.2
V
T J =25⬚C, I S =-3.4A,
V GS =0V
27.2
ns
T J =25⬚C, I F =-3A,
di/dt= 100A/␮s
25.4
nC
NOTES
(1) Measured under pulsed conditions. Width ⱕ300µs. Duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - JULY 2003
SEMICONDUCTORS
4
ZXMP4A16G
TYPICAL CHARACTERISTICS
ISSUE 4 - JULY 2003
5
SEMICONDUCTORS
ZXMP4A16G
ISSUE 4 - JULY 2003
SEMICONDUCTORS
6
ZXMP4A16G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
DIM
Millimetres
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
A1
0.02
0.10
0.0008
0.004
e1
b
0.66
0.84
0.026
0.033
E
6.70
7.30
b2
2.90
3.10
0.114
0.122
E1
3.30
C
0.23
0.33
0.009
0.013
L
0.90
D
6.30
6.70
0.248
0.264
2.30 BSC
4.60 BSC
Inches
Min
Max
0.0905 BSC
0.181 BSC
0.264
0.287
3.70
0.130
0.146
-
0.0355
-
© Zetex plc 2003
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For the latest product information, log on to
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ISSUE 4 - JULY 2003
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SEMICONDUCTORS