CYSTEKEC MTC3585N6 N- and p-channel enhancement mode power mosfet Datasheet

Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 1/8
CYStech Electronics Corp.
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC3585N6
Description
The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
Outline
MTC3585N6
SOT-26
D1
G:Gate
S:Source
D:Drain
MTC3585N6
S1
D2
G1
S2
G2
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
BVDSS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Rth,ja
Limits
N-channel P-channel
20
-20
±12
±12
3.5
-2.5
2.8
-1.97
10
-10
1.14
0.01
-55~+150
110
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
20
0.5
-
0.02
7
1.2
±100
1
10
75
125
-
V
V/°C
V
nA
μA
μA
230
55
40
6
8
10
3
4
0.7
2
1.1
370
7
1.7
16
8
1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
Source-Drain Diode
*VSD
*trr
*Qrr
-
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±12V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0, Tj=70°C
ID=3.5A, VGS=4.5V
ID=1.2A, VGS=2.5V
VDS=5V, ID=3A
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A,
VGS=5V, RG=3.3Ω, RD=15Ω
nC
VDS=16V, ID=3A, VGS=4.5V
Ω
f=1MHz
V
ns
nC
VGS=0V, IS=1.2A
mΩ
IS=3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC3585N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 3/8
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
-20
-
-0.01
4
-1.2
±100
-1
-25
120
160
300
-
V
V/°C
V
nA
μA
μA
270
70
55
6
17
16
5
5
1
2
430
8
-
20
15
-1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
Test Conditions
S
VGS=0, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VGS=±12V, VDS=0
VDS=-20V, VGS=0
VDS=-16V, VGS=0, Tj=70°C
ID=-2.8A, VGS=-10V
ID=-2.5A, VGS=-4.5V
ID=-2A, VGS=-2.5V
VDS=-5V, ID=-2A
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-10V, ID=-1A,
VGS=-10V, RG=3.3Ω, RD=10Ω
mΩ
nC
VDS=-16V, ID=-2A, VGS=-4.5V
V
ns
nC
VGS=0V, IS=-1.2A
IS=-2A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC3585N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 4/8
N-channel Characteristic Curves
MTC3585N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 5/8
N-channel Characteristic Curves(Cont.)
MTC3585N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 6/8
P-channel Characteristic Curves
MTC3585N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 7/8
P-channel Characteristic Curves(Cont.)
MTC3585N6
CYStek Product Specification
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 8/8
CYStech Electronics Corp.
SOT-26 Dimension
A
D
Marking:
d1
d2
6
5
4
Style:
Pin 1. Gate1 (G1)
Pin 2. Source2 (S2)
Pin 3. Gate2 (G2)
Pin 4. Drain2 (D2)
Pin 5. Source1 (S1)
Pin 6. Drain1 (D1)
B C
1
2
3
Device Name
Date Code
E
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
I
F
L
H
J
G
Inches
Min.
Max.
0.1063
0.1220
0.1024
0.1181
0.0551
0.0709
0.0748 REF
0.0374 REF
0.0374 REF
0.0118
0.0217
DIM
A
B
C
D
d1
d2
E
3585
□□□□
Millimeters
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.90 REF
0.95 REF
0.95 REF
0.30
0.55
K
DIM
F
G
H
I
J
K
L
Inches
Min.
Max.
0.0472 REF
0
0.0039
0.0079
0.0047 REF
0.0146 REF
0.0236 REF
0°
10°
Millimeters
Min.
Max.
1.20 REF
0
0.10
0.20
0.12 REF
0.37 REF
0.60 REF
0°
10°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC3585N6
CYStek Product Specification
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