ON MPSW92RLREG One watt high voltage transistor Datasheet

MPSW92
One Watt High Voltage
Transistor
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−300
Vdc
Collector −Base Voltage
VCBO
−300
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
1
EMITTER
12
THERMAL CHARACTERISTICS
Characteristic
2
BASE
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
MARKING DIAGRAM
MPS
W92
YWW G
G
MPSW45x = Device Code
x = 45A Devices
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 5
1
Publication Order Number:
MPSW92/D
MPSW92
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−300
−
Vdc
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−300
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current
(VCB = −200 Vdc, IE = 0)
ICBO
−
−0.25
mAdc
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
IEBO
−
−0.1
mAdc
25
40
25
−
−
−
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −30 mAdc, VCE = −10 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
VCE(sat)
−
−0.5
Vdc
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
VBE(sat)
−
−0.9
Vdc
fT
50
−
MHz
Ccb
−
6.0
pF
−
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
TO−92
5000 Units / Box
MPSW92G
TO−92
(Pb−Free)
5000 Units / Box
MPSW92RLREG
TO−92
(Pb−Free)
2000 / Tape & Reel
Device
MPSW92
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MPSW92
300
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
250
200
25°C
150
-55°C
100
50
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f,
T CURRENT-GAIN — BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Cib @ 1MHz
10
Ccb @ 1MHz
1.0
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
150
130
110
90
70
50
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
30
10
1000
1
Figure 2. Capacitance
3
5
11
13
15
7
9
IC, COLLECTOR CURRENT (mA)
17
19
21
Figure 3. Current−Gain − Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
http://onsemi.com
3
MPSW92
PACKAGE DIMENSIONS
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE O
A
B
R
STRAIGHT LEAD
BULK PACK
P
L
F
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI­
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
--0.250
--0.080
0.105
--0.100
0.135
--0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.53
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
--6.35
--2.04
2.66
--2.54
3.43
--3.43
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
A
BENT LEAD
TAPE & REEL
AMMO PACK
R
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.094
0.102
0.018
0.024
0.500
--0.080
0.105
--0.100
0.135
--0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.53
2.40
2.80
0.46
0.61
12.70
--2.04
2.66
--2.54
3.43
--3.43
---
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPSW92/D
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