ISC BUZ40B Soa is power dissipation limited Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
BUZ40B
DESCRIPTION
•8.5A, 500V
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
APPLICATIONS
·This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃
8.5
A
Total Dissipation@TC=25℃
150
W
Max. Operating Junction Temperature
-55~150
℃
Storage Temperature Range
-55~150
℃
ID
Ptot
Tj
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
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MAX
UNIT
0.83
℃/W
75
℃/W
1
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isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
BUZ40B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
500
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.1
RDS(ON)
Drain-Source On-stage Resistance
IGSS
MAX
UNIT
V
4
V
VGS= 10V; ID= 5.5A
0.8
Ω
Gate Source Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
1
uA
VSD
Diode Forward Voltage
IF= 20A; VGS= 0
1.3
V
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