ROHM 2SA2073_11

High voltage discharge, High speed switching,
Low Noise (60V, 3A)
2SA2073
Dimensions (Unit : mm)
Features
1) High speed switching. ( tf : Typ. : 20ns at IC = 3A)
2) Low saturation voltage, typically.
(Typ. : 200mV at IC = 2.0A, IB = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SC5826.
ATV
(1) Emitter
(2) Collector
(3) Base
Applications
High speed switching, Low noise
Taping specifications
Abbreviated symbol : A2073
Structure
PNP Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
Code
TV2
Basic ordering unit (pieces)
2500
2SA2073
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
Parameter
Collector current
VEBO
−6
V
DC
IC
−3
A
Pulsed
ICP
−6
A
PC
1.0
W
tj
150
°C
tstg
−55 to 150
°C
Power dissipation
Junction temperature
Range of storage temperature
∗
∗Pw=10ms
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2011.06 - Rev.C
2SA2073
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
−60
−60
−6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
−1.0
−1.0
Unit
V
V
V
μA
μA
Collector-emitter saturation voltage
VCE (sat)
−
−200
−500
mV
hFE
120
−
270
−
DC current gain
Transistor frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
fT
−
200
−
MHz
Cob
−
40
−
pF
ton
tstg
tf
−
−
−
20
130
20
−
−
−
ns
ns
ns
Condition
IC= −1mA
IC= −100μA
IE= −100μA
VCB= −40V
VEB= −4V
IC= −2.0A
IB= −200mA
VCE= −2V
IC= −100mA
VCE= −10V
IE=100mA
f=10MHz
VCB= −10V
IE=0mA
f=1MHz
IC= −3A
IB1= −300mA
IB2=300mA
VCC ∼
− −25V
∗1
∗1
∗2
∗1 Single pulse
∗2 See switching characteristics measurement circuits
hFE RANK
Q
120−270
Electrical characteristic curves
−10
−160
−800μA
−700μA
−120
−600μA
−500μA
−80
−400μA
−300μA
−200μA
−40
−100μA
0
-1
-2
-3
-4
−1
25°C
125°C
-5
−40°C
−0.1
−0.01
0μA
0
COLLECTOR CURRENT : IC(A)
COLLECTOR CURRENT : IC (mA)
−900μA
1000
VCE=−2V
IB=−1000μA
DC CURRENT GAIN : hFE
−200
0
−0.5
−1.0
Ta=25°C
VCE=−5V
VCE=−3V
100
VCE=−2V
10
1
−0.001
−1.5
−0.01
−0.1
−1
−10
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain
vs.collector current ( Ι )
1000
VCE=−2V
DC CURRENT GAIN : hFE
125°C
25°C
100
−40°C
10
1
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs.collector current ( ΙΙ )
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COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Fig.1 Typical output characteristics
−1
Ta=25°C
−0.1
Ic/Ib=20/1
Ic/Ib=10/1
−0.01
−0.001
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs.collector current ( Ι )
2/3
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−1
IC/Ib=10/1
125°C
25°C
−0.1
−0.01
−0.001
−40°C
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs.collector current ( ΙΙ )
2011.06 - Rev.C
−10
1000
IC/Ib=10/1
−40°C
−1
25°C
125°C
−0.1
−0.001
−0.01
−0.1
−1
Ta=25°C
VCE=−10V
100
10
1
0.001
−10
COLLECTOR CURRENT : IC (A)
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.7 Base-emitter saturation voltage
vs. collector current
1000
0.01
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Data Sheet
TRANSITION FREQUENCY : fT (MHz)
BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)
2SA2073
1000
Ta=25°C
f=1MHz
100
10
1
−0.1
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Transition frequency
Fig.9 Collector output capacitance
Ta=25°C
VCC=−25V
tstg
SW (ns)
tf
100
10
−0.01
ton
−0.1
−1
−10
COLLECTOR CURRENT : Ic (A)
Fig.10 Switching Time
Switching characteristics measurement circuits
RL=8.3Ω
IC
IB1
VIN
PW
VCC −25V
IB2
PW 50μs
DUTY CYCLE 1%
IB2
IB1
BASE CURRENT
WAVEFORM
ton
tstg
tf
90%
COLLECTOR CURRENT
WAVEFORM
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IC
10%
3/3
2011.06 - Rev.C
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R1120A