Fairchild FDS4675 40v p-channel power trenchmosfet Datasheet

tm
FDS4675_F085
40V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
• –11 A, –40 V
RDS(ON) = 0.013 Ω @ V GS = –10 V
RDS(ON) = 0.017 Ω @ V GS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
Applications
• Power management
• High power and current handling capability
• Load switch
• Qualified to AEC Q101
• Battery protection
• RoHS Compliant
D
D
D
D
SO-8
S
Pin 1
S
S
Absolute Maximum Ratings
Symbol
4
6
3
7
2
8
1
G
TA=25oC unless otherwise noted
Parameter
V DSS
Drain-Source Voltage
V GSS
ID
Gate-Source Voltage
Drain Current – Continuous
PD
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
TJ , TSTG
5
Ratings
–40
Units
±20
V
A
V
–11
–50
(Note 1a)
2.4 (steady state)
(Note 1b)
1.4
(Note 1c)
1.2
-55 to +175
°C
Operating and Storage Junction Temperature Range
W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
62.5 (steady state), 50 (10 sec)
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4675
FDS4675_F085
13’’
©2010 Fairchild Semiconductor Corporation
FDS4675_F085 Rev. A
1
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS4675_F085 P-Channel PowerTrench® MOSFET
February 2010
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
∆BV DSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
V GS = 0 V, ID = –250 µA
V DS = –32 V, V GS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
V GS = 20 V,
V DS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
V GS = –20 V
V DS = 0 V
–100
nA
–3
V
On Characteristics
–40
ID = –250 µA, Referenced to 25°C
V
–34
mV/°C
(Note 2)
V GS(th)
∆V GS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V DS = V GS , ID = –250 µA
ID = –250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
V GS = –10 V,
V DS = –5 V
gFS
Forward Transconductance
V DS = –5 V,
ID = –11 A
44
S
V DS = –20 V,
f = 1.0 MHz
V GS = 0 V,
4350
pF
622
pF
290
pF
–1
–1.4
4.6
V GS = –10 V,
ID = –11 A
V GS = –4.5 V, ID = –9.5 A
V GS =–10 V, ID =–11 A, TJ =125°C
10
13
15
mV/°C
13
17
21
–25
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
(Note 2)
V DD = –20 V,
V GS = –4.5 V,
20
36
ns
29
46
ns
Turn–Off Delay Time
95
152
ns
tf
Turn–Off Fall Time
60
96
ns
Qg
Total Gate Charge
40
56
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
V DS = –20 V,
V GS = –4.5 V
ID = –1 A,
RGEN = 6 Ω
ID = –11 A,
11
nC
13
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
V SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V GS = 0 V, IS = –2.1 A
Voltage
(Note 2)
–0.7
–2.1
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4675_F085 Rev. A
2
www.fairchildsemi.com
FDS4675_F085 P-Channel PowerTrench® MOSFET
Electrical Characteristics
VGS = -10V
40
2.2
-3.5V
-6.0V
-4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-I D, DRAIN CURRENT (A)
50
-3.0V
30
20
-2.5V
10
0
0
0.5
1
1.5
2
2.5
2
1.8
VGS = -3.0V
1.6
-3.5V
1.4
-4.0V
-4.5V
1.2
-6.0V
-10V
1
0.8
3
0
10
20
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
-25
0
25
50
75
100
125
ID = -5.5A
0.04
0.03
o
TA = 125 C
0.02
o
TA = 25 C
0.01
0
150
2
2.5
o
TJ , JUNCTION TEMPERATURE ( C)
o
TA = -55 C
VDS = -5.0V
4
4.5
5
100
o
25 C
125 C
o
40
3.5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-I S, REVERSE DRAIN CURRENT (A)
50
3
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
-I D, DRAIN CURRENT (A)
50
0.05
ID = -11A
VGS = -10V
-50
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
30
-ID , DIRAIN CURRENT (A)
30
20
10
0
VGS = 0V
10
o
T A = 125 C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
1
1.5
2
2.5
3
3.5
0
-V GS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDS4675_F085 Rev. A
0.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
www.fairchildsemi.com
FDS4675_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics
6000
VDS = -10V
ID = -11A
-20V
4
f = 1 MHz
VGS = 0 V
5000
-30V
CAPACITANCE (pF)
-V GS, GATE-SOURCE VOLTAGE (V)
5
3
2
1
CISS
4000
3000
2000
1000
0
0
10
20
30
40
C OSS
C RSS
0
50
0
10
Q g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
RDS(ON) LIMIT
1ms
10ms
100ms
10s
1
1s
DC
VGS = -4.5V
SINGLE PULSE
o
Rθ JA = 125 C/W
0.1
o
T A = 25 C
0.01
0.1
1
10
SINGLE PULSE
Rθ JA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
100
0.01
0.1
-VD S, DRAIN-SOURCE VOLTAGE (V)
1
10
100
t1 , TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
40
50
100µs
10
30
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
-I D, DRAIN CURRENT (A)
100
20
-VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA (t) = r(t) + RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
0.01
P(pk)
0.02
0.01
t1
SINGLE PULSE
0.001
0.0001
0.001
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
t 1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4675_F085 Rev. A
4
www.fairchildsemi.com
FDS4675_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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expected to result in a significant injury of the user.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
FDS4675_F085 Rev. A
5
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FDS4675_F085 P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
PowerTrench®
FRFET®
The Power Franchise®
®
Auto-SPM™
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Green FPS™ e-Series™
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CTL™
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™
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®
MegaBuck™
DEUXPEED
TinyPower™
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Saving our world, 1mW/W/kW at a time™
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SMART START™
MicroPak2™
®
TRUECURRENT™*
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OptiHiT™
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