MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G Power Rectifier www.onsemi.com Features and Benefits • • • • • • Ultrafast 30 Nanosecond Recovery Times 175°C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts SURHD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ULTRAFAST RECTIFIER 5.0 AMPERES 600 VOLTS DPAK CASE 369C STYLES 3, 8 1 4 3 Applications • Power Supplies • Inverters • Free Wheeling Diodes • • 4 3 STYLE 3 STYLE 8 MARKING DIAGRAMS Mechanical Characteristics • • • • 1 Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 0.4 g (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) AYWW AYWW UH560G 560W1G STYLE 3 STYLE 8 UH560 560W1 A Y WW G = MURHD560T4 = MURHD560W1T4 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MURHD560T4G DPAK (Pb−Free) 2,500 / Tape & Reel SURHD8560T4G DPAK (Pb−Free) 2,500 / Tape & Reel MURHD560W1T4G DPAK (Pb−Free) 2,500 / Tape & Reel SURHD8560W1T4G DPAK (Pb−Free) 2,500 / Tape & Reel SSURHD8560W1T4G DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 9 1 Publication Order Number: MURHD560/D MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 159°C) IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 5.0 Operating Junction and Storage Temperature Range A 50 TJ, Tstg −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance, Junction to Case RqJC 2.5 °C/W Maximum Thermal Resistance, Junction to Ambient (Note 1) RqJA 49.5 °C/W Value Unit 1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm2 Cu area. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5.0 Amps, TC = 25°C) (IF = 5.0 Amps, TC = 125°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) IR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C) trr V 2.7 1.65 mA 10 70 ns 30 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G 100 IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 100 150°C 10 125°C 100°C 1 25°C 0.1 0.01 150°C 10 125°C 100°C 1 25°C 0.1 0.01 0 1.0 0.5 2.5 2.0 1.5 0 3.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 6.0 IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 2. Maximum Forward Voltage 1.0E−4 IR, REVERSE CURRENT (AMPS) 5.0 4.0 3.0 VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.0E−3 150°C 125°C 1.0E−5 150°C 1.0E−4 100°C 1.0E−6 125°C 100°C 1.0E−5 1.0E−7 1.0E−6 1.0E−8 25°C 1.0E−7 25°C 1.0E−9 1.0E−8 0 100 200 400 300 500 600 0 100 200 400 300 500 600 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 100 PFO, AVERAGE POWER DISSIPATION (WATTS) 20 90 C, CAPACITANCE (pF) 2.0 1.0 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 TJ = 175°C 15 SQUARE WAVE 10 dc 5 0 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Typical Capacitance Figure 6. Forward Power Dissipation www.onsemi.com 3 8 9 10,000 RqJC = 2.5°C/W TJ = 175°C dc 8 I FSM , NON-REPETITIVE SURGE CURRENT (A) IF, AVERAGE FORWARD CURRENT (AMPS) MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G 7 6 SQUARE WAVE 5 4 3 2 1 0 100 110 120 130 140 150 160 170 1,000 180 100 10 100 10 1,000 10,000 TC, CASE TEMPERATURE (°C) tp, SQUARE WAVE PULSE DURATION (ms) Figure 7. Current Derating Figure 8. Typical Non−Repetitive Surge Current R(t), TRANSIENT THERMAL RESISTANCE * Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. 10 0.5 1 0.2 0.1 0.05 P(pk) 0.01 0.1 t1 Single Pulse t2 DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response, Junction to Case 100 0.5 10 1 0.2 0.1 0.05 P(pk) 0.01 t1 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1.0 t, TIME (s) Figure 10. Thermal Response, Junction to Ambient www.onsemi.com 4 10 100 1000 MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 b2 e c SIDE VIEW b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 6.17 0.243 SCALE 3:1 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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