Infineon IGB30N60H3 600v high speed switching series third generation Datasheet

IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGB30N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowturn-offenergy
•lowVCEsat
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating,halogen-freemouldcompound,RoHS
compliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
C
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
E
KeyPerformanceandPackageParameters
Type
IGB30N60H3
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
600V
30A
1.95V
175°C
G30H603
PG-TO263-3
2
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
Maximumratings
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
600
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
60.0
30.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
120.0
A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs
-
120.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
187.0
94.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
µs
5
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.80
K/W
Thermal resistance, min. footprint
junction - ambient
Rth(j-a)
65
K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
600
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.95
2.30
2.50
2.40
-
Gate-emitter threshold voltage
VGE(th)
IC=0.43mA,VCE=VGE
4.1
5.1
5.7
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=30.0A
-
16.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA
4
V
V
V
40.0 µA
2000.0
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1630
-
-
107
-
-
50
-
VCC=480V,IC=30.0A,
VGE=15V
-
165.0
-
nC
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
pF
160
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
18
-
ns
-
22
-
ns
-
207
-
ns
-
22
-
ns
-
0.73
-
mJ
-
0.44
-
mJ
-
1.17
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
rG=10.5Ω,Lσ=95nH,
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW30N60H3) reverse
recovery.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
18
-
ns
-
22
-
ns
-
239
-
ns
-
23
-
ns
-
0.95
-
mJ
-
0.60
-
mJ
-
1.55
-
mJ
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
rG=10.5Ω,Lσ=95nH,
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW30N60H3) reverse
recovery.
5
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
80
100
60
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
70
50
40
30
TC=80°
20
tp=1µs
10µs
10
50µs
100µs
200µs
500µs
1
DC
TC=110°
TC=80°
10
TC=110°
0
1
10
100
0.1
1000
1
f,SWITCHINGFREQUENCY[kHz]
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=10,5Ω)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
200
60
175
150
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
50
125
100
75
50
40
30
20
10
25
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
6
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
120
120
VGE=20V
VGE=20V
100
17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
100
15V
80
13V
11V
9V
60
7V
5V
40
20
0
17V
15V
80
13V
11V
9V
60
7V
5V
40
20
0
1
2
3
4
5
0
6
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
3
4
5
6
7
8
4.0
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=175°C
90
80
IC,COLLECTORCURRENT[A]
2
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
100
70
60
50
40
30
20
10
0
1
VCE,COLLECTOR-EMITTERVOLTAGE[V]
5
6
7
8
9
10
11
IC=15A
IC=30A
IC=60A
3.5
3.0
2.5
2.0
1.5
1.0
12
VGE,GATE-EMITTERVOLTAGE[V]
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
7
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
5
10
15
20
25
30
35
40
45
50
55
100
10
60
3
8
IC,COLLECTORCURRENT[A]
13
18
23
28
33
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=10,5Ω,testcircuitinFig.E)
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=30A,testcircuitinFig.E)
6.0
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
25
50
75
100
125
150
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
175
Tj,JUNCTIONTEMPERATURE[°C]
typ.
min.
max.
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=30A,
rG=10,5Ω,testcircuitinFig.E)
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.43mA)
8
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
5
3.0
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
Eon
Ets
4
3
2
1
0
5
10
15
20
25
30
35
40
45
50
55
2.5
2.0
1.5
1.0
0.5
0.0
60
3
8
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=10,5Ω,testcircuitinFig.E)
23
28
33
2.00
Eoff
Eon
Ets
1.75
E,SWITCHINGENERGYLOSSES[mJ]
1.75
E,SWITCHINGENERGYLOSSES[mJ]
18
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=30A,testcircuitinFig.E)
2.00
1.50
1.25
1.00
0.75
0.50
0.25
0.00
13
rG,GATERESISTOR[Ω]
Eoff
Eon
Ets
1.50
1.25
1.00
0.75
0.50
0.25
25
50
75
100
125
150
0.00
200
175
Tj,JUNCTIONTEMPERATURE[°C]
250
300
350
400
450
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=30A,
rG=10,5Ω,testcircuitinFig.E)
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=30A,
rG=10,5Ω,testcircuitinFig.E)
9
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
16
120V
480V
14
12
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
1000
10
8
6
Cies
Coes
Cres
100
4
2
0
0
20
40
60
80
10
100 120 140 160 180
0
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=30A)
30
15
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
20
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
380
330
280
230
180
130
80
10
VCE,COLLECTOR-EMITTERVOLTAGE[V]
10
12
14
16
18
12
9
6
3
0
20
VGE,GATE-EMITTERVOLTAGE[V]
10
11
12
13
14
15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
10
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.05279329 0.1938242 0.2577884 0.2956575
τi[s]:
6.5E-5
4.7E-4
6.1E-3
0.06477749
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
11
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
10.31
8.60
MIN
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
0.386
0.256
2.54
5.08
2
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
Z8B00003324
0
0
5 5
0.100
0.200
2
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
12
7.5mm
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
vGE(t)
90% VGE
a
a
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
2% IC
t
vCE(t)
2% VCE
t1
t2
t3
t4
t
13
Rev.2.3,2014-03-11
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
RevisionHistory
IGB30N60H3
Revision:2014-03-11,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2010-07-26
Preliminary datasheet
2.1
2013-12-09
New value Ices max limit at 175°C
2.2
2014-02-26
Without PB free logo
2.3
2014-03-11
Max ratings Vce, Tvj ≥ 25°C
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©2014InfineonTechnologiesAG
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
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Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
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endangered.
14
Rev.2.3,2014-03-11
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