FCP104N60 N-Channel SuperFET® II MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. • Typ. RDS(on) = 96 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies D GD S G TO-220 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 6.8 A EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ dv/dt Parameter FCP104N60 600 - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) 37 - Continuous (TC = 100oC) - Pulsed 24 A 111 A (Note 2) 809 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt V (Note 1) (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL ±30 Unit V - Derate Above 25oC 20 V/ns 357 W 2.85 W/oC -55 to +150 oC 300 oC FCP104N60 Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 0.35 40 1 oC/W www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET June 2014 Part Number FCP104N60 Top Mark FCP104N60 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - V - 0.67 - V/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, Referenced to 25oC VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V,TC = 125oC - 1.98 - VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 3.5 V Static Drain to Source On Resistance - 96 104 mΩ gFS Forward Transconductance VGS = 10 V, ID = 18.5 A VDS = 20 V, ID = 18.5 A - 33 - S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 380 V, VGS = 0 V, f = 1 MHz - 3130 4165 pF - 75 100 pF pF - 3.66 - VDS = 0 V to 480 V, VGS = 0 V - 280 - pF VDS = 380 V, ID = 18.5 A, VGS = 10 V - 63 82 nC - 14 - nC - 15 - nC - 0.97 - Ω - 26 62 ns - 18 46 ns - 72 154 ns - 3.3 17 ns (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 18.5 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 37 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 114 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18.5 A - - 1.2 V trr Reverse Recovery Time - 414 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18.5 A, dIF/dt = 100 A/μs - 8.8 - μC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 6.8 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18.5 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C 4. Essentially independent of operating temperature. ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 2 www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 VGS = 10.0V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 Figure 2. Transfer Characteristics 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.3 1 10 VDS, Drain-Source Voltage[V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.24 200 100 o IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature *Note: TC = 25 C 0.20 0.16 VGS = 10V 0.12 *Notes: 1. VGS = 0V 2. 250μs Pulse Test 10 o 150 C 1 o 25 C 0.1 0.01 VGS = 20V 0.08 0 20 40 60 ID, Drain Current [A] 80 0.001 0.0 100 Figure 5. Capacitance Characteristics 10 VGS, Gate-Source Voltage [V] Ciss 1000 100 Coss 10 1 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1.5 *Note: ID = 18.5A VDS = 120V 8 VDS = 300V VDS = 480V 6 4 2 Crss 1 10 100 VDS, Drain-Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 20000 10000 Capacitances [pF] 2 0 600 3 0 14 28 42 56 Qg, Total Gate Charge [nC] 70 www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 2.5 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 Figure 8. On-Resistance Variation vs. Temperature -50 0 50 100 150 o TJ, Junction Temperature [ C] ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 1 10ms DC *Notes: 0.1 1.0 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 40 10μs Operation in This Area is Limited by R DS(on) 1.5 Figure 10. Maximum Drain Current vs. Case Temperature 300 10 2.0 0.5 -100 200 Figure 9. Maximum Safe Operating Area 100 *Notes: 1. VGS = 10V 2. ID = 18.5A o 1. TC = 25 C 30 20 10 o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 20 EOSS, [μJ] 16 12 8 4 0 0 120 240 360 480 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 600 4 www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCP104N60 — N-Channel SuperFET® II MOSFET Typical Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 *Notes: 0.01 o 1. ZθJC(t) = 0.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 t2 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 5 1 10 www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET Figure 13. Gate Charge Test Circuit & Waveform IG = const. Figure 14. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 6 www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 7 www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET Mechanical Dimensions Figure 17. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 9 www.fairchildsemi.com FCP104N60 — N-Channel SuperFET® II MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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