ROHM RF2001NS3D_11

Data Sheet
Super Fast Recovery Diode
RF2001NS3D
Dimensions (Unit : mm)
Series
Standard Fast Recovery
Land size figure (Unit : mm)
RF2001
NS3D
Applications
General rectification
①
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common dual type
Structure
ROHM : LPDS
JEITA : TO263S
Construction
Silicon epitaxial planer
①
① ② ③
Manufacture Year, Week and Day
Taping dimensions (Unit : mm)
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≤0.5
Direct voltage
60Hz half sin wave resistive load ,
Tc=90°C
1/2 Io per diode
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Electrical characteristics (Tj=25C, per diode)
Parameter
Symbol
VF
Forward voltage
Conditions
Min.
Limits
350
300
20
Unit
V
V
A
100
A
150
55 to 150
C
C
Typ.
Max.
Unit
IF=10A
－
1.2
1.3
V
Reverse current
IR
VR=300V
－
0.03
10
μA
Reverse recovery time
Thermal resistance
trr
IF=0.5A,IR=1A,Irr=0.25×I R
－
17
25
ns
Rth(j-c)
junction to case
－
－
2
°C/W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Data Sheet
RF2001NS3D
100000
100
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
10000
Tj=125°C
10
Tj=150°C
Tj=25°C
1
Tj=75°C
Tj=125°C
1000
100
Tj=75°C
Tj=25°C
10
per diode
per diode
1
0.1
0
500
1000
1500
0
2000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
50
100
150
200
300
1300
1000
IF=10A
f=1MHz
Tj=25°C
1250
FORWARD VOLTAGE:VF(mV)
per diode
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
250
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
per diode
1200
1150
1100
AVE:1163mV
1050
10
1000
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
240
VR=300V
Tj=25°C
per diode
AVE:46.7nA
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
100
1
f=1MHz
VR=0V
Tj=25°C
per diode
220
200
AVE:207.8pF
180
Ct DISPERSION MAP
IR DISPERSION MAP
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2/4
2011.10 - Rev.A
30
300
IF=0.5A
IR=1A
Irr=0.25×IR
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
250
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RF2001NS3D
8.3ms
200
150
AVE:167.5A
100
50
0
25
Tj=25°C
per diode
20
15
AVE:16.9ns
10
5
0
trr DISPERSION MAP
IFSM DISPERSION MAP
1000
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
100
10
IFSM
8.3ms
t
100
8.3ms
1cyc
10
1
1
10
1
100
10
30
10
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
AVE：29.8kV
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
15
10
Rth(j-c)
1
5
0
C=200pF
R=0Ω
0.1
0.001
C=100pF
R=1.5kΩ
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
0.01
3/4
2011.10 - Rev.A
Data Sheet
RF2001NS3D
35
45
D.C.
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
35
FORWARD POWER
DISSIPATION:Pf(W)
30
D=0.8
D=0.5
half sin wave
30
D=0.2
25
D=0.1
20
D=0.05
15
Io
0A
0V
D.C.
VR
t
D=0.8
25
T
D=0.5
20
D=t/T
VR=280V
Tj=150°C
half sin wave
15
D=0.2
10
10
5
5
D=0.1
D=0.05
0
0
0
10
20
30
0
40
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
35
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
30
D=0.8
25
Io
0A
0V
VR
t
D=0.5
T
D=t/T
VR=280V
Tj=150°C
20
half sin wave
15
D=0.2
10
D=0.1
5
D=0.05
0
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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4/4
2011.10 - Rev.A
Notice
Notes
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R1120A