APTM10HM09FT3G Full - Bridge MOSFET Power Module 13 14 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Q3 18 11 22 7 23 8 19 Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of integration 10 Q2 Q4 26 4 27 3 30 29 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Max ratings Unit 100 V Tc = 25°C 139 ID Continuous Drain Current A Tc = 80°C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 10 mΩ PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000 * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. July, 2006 Parameter Drain - Source Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM10HM09FT 3G– Rev 1 Symbol VDSS VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C APTM10HM09FT3G All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IS VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 9 2 Min VGS = 10V VBus = 50V ID =139A Typ 9875 3940 1470 350 Unit Max Unit µA mΩ V nA pF nC 180 35 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A R G = 5Ω 70 125 552 µJ 604 Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, R G = 5Ω Test Conditions ns 95 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, R G = 5Ω 608 µJ 641 Min Typ Tj = 25°C Max 139 100 1.3 8 190 Tj = 125°C 370 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 139A IS = - 139A VR = 66V diS/dt = 100A/µs Max 100 500 10 4 ±100 60 Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C 0.4 Tj = 125°C 1.7 Unit A V V/ns ns µC July, 2006 Symbol X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 139A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM10HM09FT 3G– Rev 1 Electrical Characteristics APTM10HM09FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Max 0.32 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM10HM09FT 3G– Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTM10HM09FT3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 120 VGS=15V, 10V & 9V 500 ID, Drain Current (A) 400 300 8V 200 7V 6V 100 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25°C 20 T J=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 69.5A 1.1 V GS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 140 RDS(on) vs Drain Current ID, DC Drain Current (A) 0.8 120 100 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4–6 APTM10HM09FT 3G– Rev 1 ID, Drain Current (A) 600 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 69.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 limited by RDSon 100µs 100 0.6 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=139A T J=25°C 14 VDS=20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM10HM09FT 3G– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10HM09FT3G APTM10HM09FT3G Delay Times vs Current Rise and Fall times vs Current 160 120 t d(off) 80 VDS=66V RG=5Ω T J=125°C L=100µH 60 40 td(on) 120 100 tr 60 40 20 0 0 0 50 100 150 200 I D, Drain Current (A) 250 0 50 100 150 200 ID, Drain Current (A) 250 Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 VDS=66V RG=5Ω TJ=125°C L=100µH 1 Switching Energy (mJ) 1.5 Eoff Eon 0.5 Eon VDS=66V ID=139A T J=125°C L=100µH 2 1.5 Eoff 1 Eon 0.5 0 0 0 50 100 150 200 250 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current 200 150 ZVS 100 ZCS Hard switching 50 0 25 50 75 100 125 30 40 50 60 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=66V D=50% RG=5Ω T J=125°C T C=75°C 250 20 Gate Resistance (Ohms) 300 Frequency (kHz) tf 80 20 Eon and Eoff (mJ) V DS=66V R G=5Ω T J=125°C L=100µH 140 t r and tf (ns) t d(on) and td(off) (ns) 100 1000 TJ=150°C 100 150 I D, Drain Current (A) TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM10HM09FT 3G– Rev 1 July, 2006 VSD, Source to Drain Voltage (V)