SPICE MODEL: MMDT3906 MMDT3906 Lead-free DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching SOT-363 A Ultra-Small Surface Mount Package C2 Lead Free/RoHS Compliant (Note 3) B1 E1 B C E2 Mechanical Data · · · · · · · · · · B2 C1 G H Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K Moisture Sensitivity: Level 1 per J-STD-020C M J D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). C2 B1 F L E1 Terminal Connections: See Diagram Marking (See Page 2): K3N E2 Ordering Information: See Below B2 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm C1 Date Code Information: See Page 2 Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -200 mA Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Ordering Information Notes: Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C (Note 2) Device Packaging Shipping MMDT3906-7-F SOT-363 3000/Tape & Reel 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3. No purposefully added lead. DS30124 Rev. 9 - 2 1 of 4 www.diodes.com MMDT3906 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) -0.65 ¾ -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kW Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 3.0 60 mS Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 75 ns OFF CHARACTERISTICS (Note 4) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 4. Short duration test pulse used to minimize self-heating. Marking Information K3N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K3N YM K3N YM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30124 Rev. 9 - 2 2 of 4 www.diodes.com MMDT3906 100 200 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) f = 1MHz Note 1 150 100 50 10 Cibo Cobo 1 0.1 0 0 25 50 75 100 125 150 200 175 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 0.1 1 10 100 1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30124 Rev. 9 - 2 3 of 4 www.diodes.com MMDT3906 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30124 Rev. 9 - 2 4 of 4 www.diodes.com MMDT3906