APTGT200TL60G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 200A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration E1 CR5 CR2 G2 Q2 NEUTRAL E2 OUT CR6 CR3 G3 Q3 E3 CR4 G4 Q4 E4 0/VBUS VBUS 0/VBUS G1 E1 G4 E4 NEUTRAL E2 E3 G2 G3 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant OUT Q1 to Q4 Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C 400A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V March, 2009 IC Max ratings 600 300 200 400 ±20 652 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGT200TL60G – Rev0 Symbol VCES APTGT200TL60G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 150°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 5.0 Typ 1.5 1.7 5.8 Max Unit 350 1.9 µA 6.5 800 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Td(on) Tr Td(off) Tf Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=200A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.8Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.8Ω Tj = 25°C VGE = ±15V T j = 150°C VBus = 300V IC = 200A Tj = 25°C RG = 1.8Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance Min Typ 12.2 0.78 0.38 nF 2.2 µC 115 45 225 ns 55 130 50 ns 300 70 0.8 1.75 5 7 mJ mJ 1000 A 0.23 °C/W March, 2009 QG Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance www.microsemi.com 2-7 APTGT200TL60G – Rev0 Symbol Cies Coes Cres APTGT200TL60G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions VR=600V IF = 150A VGE = 0V IF = 150A VR = 300V di/dt =2800A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 150 1.6 1.5 100 150 7.2 Tj = 150°C Tj = 25°C Tj = 150°C 15.2 1.7 3.6 Max 150 400 Junction to Case Thermal Resistance Unit V µA A 2 V ns µC mJ 0.52 °C/W Max Unit V CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =2800A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 150 400 200 1.6 1.5 125 220 9.4 Tj = 150°C Tj = 25°C Tj = 150°C 19.8 2.2 4.8 Junction to Case Thermal Resistance µA A 2 V ns µC mJ 0.39 °C/W Max Unit V Thermal and package characteristics Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals www.microsemi.com M6 M5 Min 2500 -40 -40 -40 3 2 Typ 175 125 100 5 3.5 280 °C N.m March, 2009 Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz g 3-7 APTGT200TL60G – Rev0 Symbol VISOL TJ TSTG TC APTGT200TL60G SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=1.8Ω T J=150°C 60 T c =85°C 20 March, 2009 40 Hard switching 0 0 50 100 150 200 250 300 IC (A) www.microsemi.com 4-7 APTGT200TL60G – Rev0 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT200TL60G Output Characteristics (VGE=15V) Output Characteristics 400 400 TJ=25°C 350 200 150 VGE=15V 200 150 VGE=9V 100 100 50 50 TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 14 350 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 1.8Ω TJ = 150°C 12 TJ=25°C 300 10 250 2.5 3 3.5 TJ=125°C Eoff 8 E (mJ) 200 150 0.5 Energy losses vs Collector Current Transfert Characteristics 400 IC (A) VGE=13V 250 TJ=150°C 250 IC (A) IC (A) 300 TJ=125°C 300 VGE=19V TJ = 150°C 350 6 4 100 TJ=150°C TJ=25°C 0 0 5 6 7 Eon 2 50 8 9 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 14 500 12 Eoff 400 Eon 8 IC (A) E (mJ) 10 6 200 VCE = 300V VGE =15V IC = 200A TJ = 150°C 4 2 300 VGE=15V TJ=150°C RG=1.8Ω 100 0 0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 15 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.2 0.7 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 March, 2009 0.15 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-7 APTGT200TL60G – Rev0 Thermal Impedance (°C/W) 0.25 APTGT200TL60G CR1 to CR4 Typical performance curve Forward Characteristic of diode 300 250 IF (A) 200 150 100 TJ=150°C 50 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 4 5 VCE = 300V IC = 150A TJ = 150°C 4 Err (mJ) Err (mJ) 3 2 1 3 2 VCE = 300V RG = 2.4Ω TJ = 150°C 1 0 0 2.5 5 7.5 10 12.5 0 15 0 50 100 150 200 250 300 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com March, 2009 0.5 6-7 APTGT200TL60G – Rev0 Thermal Impedance (°C/W) 0.6 APTGT200TL60G CR5 & CR6 Typical performance curve Forward Characteristic of diode 400 IF (A) 300 200 TJ=150°C 100 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance VCE = 300V IC = 200A TJ = 150°C 4 VCE = 300V RG = 1.8 Ω TJ = 150°C 6 3 Err (mJ) Err (mJ) Energy losses vs Collector Current 8 5 2 4 2 1 0 0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 0 15 100 200 300 400 IF (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 March, 2009 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTGT200TL60G – Rev0 Thermal Impedance (°C/W) 0.4