ADPOW APTGF50TDU120P Triple dual common source npt igbt power module Datasheet

APTGF50TDU120P
Triple dual Common Source
VCES = 1200V
IC = 50A @ Tc = 80°C
NPT IGBT Power Module
G1
G3
E1
G5
E5
E3
E3/E4
E1/E2
E5/E6
E2
E4
E6
G2
G4
G6
C2
C4
C1
C6
C3
G1
E1/E2
C2
E1
C5
G5
G3
E3/E4
E3
E5/E6
IC
ICM
VGE
PD
RBSOA
E5
E2
E4
E6
G2
G4
G6
C4
C6
Absolute maximum ratings
Symbol
VCES
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C5
C3
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
75
50
150
±20
312
150A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF50TDU120P – Rev 0 September, 2004
C1
APTGF50TDU120P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
Test Conditions
VGE = 0V, IC = 500 µA
VGE = 0V
Tj = 25°C
VCE = 1200V
Tj = 125°C
VGE =15V
Tj = 25°C
IC = 50A
Tj = 125°C
VGE = VCE, IC = 1 mA
VGE = ±20 V, VCE = 0V
Min
1200
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
VGS = 15V
VBus = 600V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
R G = 5Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 50A
R G = 5Ω
Typ
3.2
4.0
4.5
Typ
3450
330
220
330
35
200
35
65
320
30
5.4
2.3
35
65
360
40
6.9
3.05
Max
500
2500
3.7
Unit
V
µA
V
6.5
100
V
nA
Max
Unit
pF
nC
ns
mJ
ns
mJ
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2-6
APTGF50TDU120P – Rev 0 September, 2004
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
APTGF50TDU120P
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
Test Conditions
Min
Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
IF(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
Diode Forward Voltage
IF = 60A
IF = 120A
IF = 60A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =200A/µs
250
500
Tj = 125°C
Tj = 25°C
400
Tj = 125°C
Tj = 25°C
470
1200
Tj = 125°C
4000
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Unit
To heatsink
V
60
2
2.3
1.8
Thermal and package characteristics
RthJC
Max
1200
Maximum Peak Repetitive Reverse Voltage
IRM
VF
Typ
M6
2500
-40
-40
-40
3
Typ
µA
A
2.5
V
ns
nC
Max
0.4
0.9
Unit
°C/W
V
150
125
100
5
250
°C
N.m
g
Package outline
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3-6
APTGF50TDU120P – Rev 0 September, 2004
5 places (3:1)
APTGF50TDU120P
Typical Performance Curve
Output characteristics (VGE=15V)
250µs Pulse Test
< 0.5% Duty cycle
160
TJ =125°C
80
40
TJ =25°C
30
20
T J=125°C
10
2
4
6
VCE, Collector to Emitter Voltage (V)
0
8
1
2
3
VCE , Collector to Emitter Voltage (V)
Gate Charge
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
300
250µs Pulse Test
< 0.5% Duty cycle
250
200
150
100
TJ =125°C
50
TJ =25°C
0
0
4
8
12
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=50A
4
3
2
Ic=25A
1
0
9
14
VCE=600V
12
10
VCE=960V
8
6
4
2
0
50
100
150
200
250
300
350
Gate Charge (nC)
Ic=100A
5
VCE=240V
IC = 50A
TJ = 25°C
16
0
VCE, Collector to Emitter Voltage (V)
8
18
16
On state Voltage vs Gate to Emitter Volt.
9
4
10
11
12
13
14
15
VGE, Gate to Emitter Voltage (V)
6
3
1
0
1.15
80
Ic, DC Collector Current (A)
90
1.00
0.95
0.90
0.85
0.80
0.75
0.70
Ic=25A
2
-50
Breakdown Voltage vs Junction Temp.
Ic=100A
Ic=50A
4
1.20
1.05
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
5
16
1.10
On state Voltage vs Junction Temperature
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
-50
-25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
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4-6
APTGF50TDU120P – Rev 0 September, 2004
0
Ic, Collector Current (A)
40
0
0
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
TJ =25°C
120
Collector to Emitter Breakdown Voltage
(Normalized)
Output Characteristics (VGE=10V)
50
Ic, Collector Current (A)
Ic, Collector Current (A)
200
APTGF50TDU120P
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
45
VCE = 600V
RG = 5Ω
40
VGE = 15V
35
30
25
0
25
50
75
100
400
VGE=15V,
TJ=125°C
350
300
250
VCE = 600V
RG = 5Ω
200
125
0
ICE, Collector to Emitter Current (A)
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
50
180
VCE = 600V
RG = 5Ω
140
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
TJ =25°C
100
VGE=15V
60
TJ = 125°C
40
30
T J = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
20
20
125
VCE = 600V
RG = 5Ω
24
TJ =125°C,
VGE=15V
20
16
12
T J =25°C,
VGE=15V
8
4
0
25
50
75
100
ICE, Collector to Emitter Current (A)
14
12
Eon, 50A
10
Eoff, 50A
8
6
Eon, 25A
4
2
6
4
Eoff, 25A
0
TJ = 125°C
TJ = 25°C
2
0
0
Switching Energy Losses (mJ)
16
VCE = 600V
VGE = 15V
RG = 5Ω
25
50
75
100
ICE, Collector to Emitter Current (A)
125
Switching Energy Losses vs Junction Temp.
8
VCE = 600V
VGE = 15V
TJ= 125°C
125
8
125
Switching Energy Losses vs Gate Resistance
18
25
50
75
100
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
0
Switching Energy Losses (mJ)
0
VCE = 600V
VGE = 15V
RG = 5Ω
6
Eon, 50A
4
Eoff, 50A
2
Eon, 25A
Eoff, 25A
0
0
10
20
30
40
Gate Resistance (Ohms)
50
0
25
50
75
100
TJ, Junction Temperature (°C)
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125
5-6
APTGF50TDU120P – Rev 0 September, 2004
25
50
75
100
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
0
APTGF50TDU120P
Cies
Minimum Switching Safe Operating Area
160
IC, Collector Current (A)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
1000
Coes
0
10
20
30
40
V CE, Collector to Emitter Voltage (V)
120
100
80
60
40
20
Cres
100
140
0
50
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.45
0.4
0.9
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0.00001
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
100
80
ZVS
VCE = 600V
D = 50%
RG = 5Ω
TJ = 125°C
TC = 75°C
60
40
ZCS
20
Hard
switching
0
10
20
30
40
50
IC, Collector Current (A)
60
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTGF50TDU120P – Rev 0 September, 2004
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
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