PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain (%) VCE(sat) - (Volts) -0.8 -0.6 ZTX550 ZTX551 -0.4 IC/IB=10 -0.2 0 -0.01 -0.1 -1 -10 80 20 -0.001 ABSOLUTE MAXIMUM RATINGS. -0.01 -1 -10 IC - Collector Current (Amps) hFE v IC PARAMETER SYMBOL Collector-Base Voltage VCBO -60 -80 Collector-Emitter Voltage VCEO -45 -60 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Ptot 1 5.7 W mW/ °C Tj:Tstg -55 to +200 °C -1.4 -1.0 Power Dissipation: at Tamb=25°C derate above 25°C -1.2 -0.9 Operating and Storage Temperature Range VBE(sat) - (Volts) VBE - (Volts) -0.1 -0.8 -0.6 -0.01 -1 -0.1 -1 VBE(on) v IC VBE(sat) v IC ZTX550 ZTX551 D.C. 1s 100ms 10ms 1.0ms 0.3ms 0.1ms 0.01 0.1 -0.01 IC - Collector Current (Amps) 1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-195 SYMBOL ZTX550 Collector-Base Breakdown Voltage V(BR)CBO -60 -10 Collector-Emitter Sustaining Voltage VCEO(sus) Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -0.1 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage ZTX551 UNIT V V UNIT CONDITIONS. -80 V IC=-100µ A -45 -60 V IC=-10mA* -5 -5 V IE=-100µ A -0.1 µA µA VCB=-45V VCB=-60V -0.1 -0.1 µA VEB=-4V VCE(sat) -0.25 -0.35 V IC=-150mA, IB=-15mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 -1.1 V IC=-150mA, IB=-15mA* Static Forward Current Transfer Ratio hFE 100 15 Transition Frequency fT 150 MIN. IC - Collector Current (Amps) Single Pulse Test at Tamb=25°C 10 0.1 -10 PARAMETER -0.7 -0.6 -0.1 ZTX550 ZTX551 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.8 E E-Line TO92 Compatible 40 VCE(sat) v IC IC - Collector Current (Amps) C B ZTX551 60 IC - Collector Current (Amps) -1.0 ZTX550 ZTX551 MAX. MIN. 300 50 10 150 3-194 MAX. 150 IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain (%) VCE(sat) - (Volts) -0.8 -0.6 ZTX550 ZTX551 -0.4 IC/IB=10 -0.2 0 -0.01 -0.1 -1 -10 80 20 -0.001 ABSOLUTE MAXIMUM RATINGS. -0.01 -1 -10 IC - Collector Current (Amps) hFE v IC PARAMETER SYMBOL Collector-Base Voltage VCBO -60 -80 Collector-Emitter Voltage VCEO -45 -60 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Ptot 1 5.7 W mW/ °C Tj:Tstg -55 to +200 °C -1.4 -1.0 Power Dissipation: at Tamb=25°C derate above 25°C -1.2 -0.9 Operating and Storage Temperature Range VBE(sat) - (Volts) VBE - (Volts) -0.1 -0.8 -0.6 -0.01 -1 -0.1 -1 VBE(on) v IC VBE(sat) v IC ZTX550 ZTX551 D.C. 1s 100ms 10ms 1.0ms 0.3ms 0.1ms 0.01 0.1 -0.01 IC - Collector Current (Amps) 1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-195 SYMBOL ZTX550 Collector-Base Breakdown Voltage V(BR)CBO -60 -10 Collector-Emitter Sustaining Voltage VCEO(sus) Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -0.1 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage ZTX551 UNIT V V UNIT CONDITIONS. -80 V IC=-100µ A -45 -60 V IC=-10mA* -5 -5 V IE=-100µ A -0.1 µA µA VCB=-45V VCB=-60V -0.1 -0.1 µA VEB=-4V VCE(sat) -0.25 -0.35 V IC=-150mA, IB=-15mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 -1.1 V IC=-150mA, IB=-15mA* Static Forward Current Transfer Ratio hFE 100 15 Transition Frequency fT 150 MIN. IC - Collector Current (Amps) Single Pulse Test at Tamb=25°C 10 0.1 -10 PARAMETER -0.7 -0.6 -0.1 ZTX550 ZTX551 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.8 E E-Line TO92 Compatible 40 VCE(sat) v IC IC - Collector Current (Amps) C B ZTX551 60 IC - Collector Current (Amps) -1.0 ZTX550 ZTX551 MAX. MIN. 300 50 10 150 3-194 MAX. 150 IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz