ISC BTA08-600C With to-220ab insulated package Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Triacs
BTA08-600C
FEATURES
·With TO-220AB insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak reverse voltage
600
V
IT(RMS)
RMS on-state current (full sine wave)Tj=105℃
8
A
ITSM
Non-repetitive peak on-state current tp=20ms
80
A
Operating junction temperature
110
℃
-45~150
℃
Tj
Tstg
Storage temperature
Rth(j-c)
Thermal resistance, junction to case
2.5
℃/W
Rth(j-a)
Thermal resistance, junction to ambient
60
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
IDRM
Repetitive peak off-state current
VR=VRRM,
VR=VRRM, Tj=110℃
VD=VDRM,
VD=VDRM, Tj=110℃
VD=12V; RL= 30Ω
Gate trigger current
mA
mA
25
Ⅱ
IH
0.01
0.5
0.01
0.5
UNIT
25
Ⅰ
IGT
MAX
mA
Ⅲ
25
Ⅳ
50
Holding current
IGT= 0.1A, Gate Open
25
mA
VGT
Gate trigger voltage all quadrant
VD=12V; RL= 30Ω
1.3
V
VTM
On-state voltage
IT= 11A; tp= 380μs
1.55
V
isc website:www.iscsemi.cn
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