NTE NTE2518 Silicon complementary transistors high current switch Datasheet

NTE2517 (NPN) & NTE2518 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Saturation Voltage
D High Current Capacity and Wide ASO
Applications:
D Voltage Regulators
D Relay Drivers
D Lamp Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
–
–
100
nA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
100
nA
DC Current Gain
hFE
VCE = 2V, IC = 100mA
140
–
400
VCE = 2V, IC = 2A
35
–
–
VCE = 10V, IC = 50mA
–
140
–
Gain Bandwidth Product
fT
MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Output Capacitance
NTE2517
Cob
Test Conditions
Min
Typ
Max
Unit
–
10
–
pF
–
25
–
pF
–
110
300
mV
–
250
500
mV
–
0.85
1.2
V
VCB = 10V, f = 1MHz
NTE2518
Collector to Emitter Saturation Voltage
NTE2517
VCE(sat)
IC = 1A, IB = 50mA
NTE2518
Base to Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 50mA
Collector to Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
60
–
–
V
Collector to Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
50
–
–
V
Emitter to Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
6
–
–
V
–
35
–
ns
–
550
–
ns
–
350
–
ns
–
30
–
ns
Turn–On Time
ton
Storage Time
NTE2517
tstg
IC = 10A, IB1 = 10A,
IB2 = 1A
NTE2518
Fall Time
tf
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.433
(11.0)
.295
(7.5)
E
C
B
.610
(15.5)
.094 (2.4)
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