BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A Mechanical Data · · · · TO-92 B C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Approx Weight: 0.18 grams D SG D BOTTOM VIEW H Maximum Ratings G Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 3.68 E 3.43 G 2.42 2.67 H 1.14 1.40 All Dimensions in mm H @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage –VDSS 60 V Drain-Gate Voltage –VDGS 60 V Gate-Source-Voltage (pulsed) VGS ±20 V Drain Current (continuous) –ID 250 mA Power Dissipation @TC = 25°C (Note 1) Pd 830 mW Tj, TSTG -55 +150 °C Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Symbol Value Unit Maximum Forward Current (continuous) Characteristic IF 0.15 A Forward Voltage Drop (Typ.) @ VGS = 0, IF = 0.15A, Tj = 25°C VF 0.85 V Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit -V(BR)DSS 60 70 — V ID = 100µA, VGS = 0 -VGS(th) — 1.0 3.0 V VGS = VDS, –ID = 1.0mA Gate-Body Leakage Current -IGSS — — 20 nA -VGS = 15V, VDS = 0 Drain-Source Cutoff Current -IDSS — — 0.5 µA -VDS = 25V, VGS = 0 Drain-Source ON Resistance rDS (ON) — 3.5 5.0 W -VGS = 10V, –ID = 0.2A RqJA — — 150 K/W Drain-Source Breakdown Voltage Gate Threshold Voltage Thermal Resistance, Junction to Ambient Air Test Condition Note 1 Forward Transconductance gFS — 150 — mS Input Capacitance Ciss — 60 — pF -VDS = 10V, –ID = 0.2A, f = 1.0MHz -VDS = 10V, VGS = 0, f = 1.0MHz Switching Times Turn On Time Turn Off Time ton toff — — 5 25 — — ns -VGS = 10V, –VDS = 10V, RD = 100W Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. DS21902 Rev. D-3 1 of 2 BS250 0.8 -ID, (ON) DRAIN SOURCE ON CURRENT (A) Pd, POWER DISSIPATION (W) 1 (See Note 1) 0.6 0.4 0.2 0 500 7V 400 100 300 5.0V 4.5V 200 4.0V 100 3.0V 0 200 40 60 1.0 TA = 25°C 80 100 -VDS = 10V TA = 25°C 400 0.8 Pulse test width 80µs; pulse duty factor 1% -ID, DRAIN CURRENT (A) -ID, (ON) DRAIN SOURCE ON-CURRENT (mA) 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics TA, AMBIENT TEMPERATURE (ºC) Fig. 1, Power Derating Curve 500 TA = 25°C Pulse test width 80µs; pulse duty factor 1% 0 0 300 -VGS = 5V 200 4.5V 4.0V 100 3.5V Pulse test width 80µs; pulse duty factor 1% 0.6 0.4 0.2 3.0V 0 0 2 0 4 6 8 0 10 500 gf s, FORWARD TRANSCONDUCTANCE (mm) -VDS = 10V Pulse test width 80µs; pulse duty factor 1% 400 2 4 6 8 10 -VGS, DRAIN-SOURCE VOLTAGE (V) Fig. 4, Drain Current vs Gate-Source Voltage -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3, Saturation Characteristics gfs, FORWARD TRANSCONDUCTANCE (mm) 6V -VGS = 5.5V 300 200 100 0 500 -VDS = 10V 400 Pulse test width 80µs; pulse duty factor 1% 300 200 100 0 0 2 4 6 8 0 10 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5, Transconductance vs Gate-Source Voltage DS21902 Rev. D-3 100 200 300 400 500 ID, DRAIN CURRENT, (mA) Fig. 6, Transconductance vs. Drain Current 2 of 2 BS250