MMST4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMST4401) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) C B C Mechanical Data • • • • • • • • • SOT-323 A B E G Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: K3T - See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate) Maximum Ratings H K M J D E L C E B Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G 1.80 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 α 0° 8° All Dimensions in mm @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current – Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 200 mW RθJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.. DS30083 Rev. 7 - 2 1 of 4 www.diodes.com MMST4403 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -100μA, IC = 0 ICEX ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 VCE(SAT) ⎯ VBE(SAT) -0.75 ⎯ ⎯ ⎯ ⎯ 300 ⎯ -0.40 -0.75 -0.95 -1.30 ⎯ 8.5 OFF CHARACTERISTICS (Note 5) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = IC = IC = IC = IC = IC = IC = IC = IC = ⎯ V V -100μA, VCE = -1.0V -1.0mA, VCE = -1.0V -10mA, VCE = -1.0V -150mA, VCE = -2.0V -500mA, VCE = -2.0V -150mA, IB = -15mA -500mA, IB = -50mA -150mA, IB = -15mA -500mA, IB = -50mA B B B B SMALL SIGNAL CHARACTERISTICS Output Capacitance Cob pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ Input Impedance hie 1.5 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 60 500 ⎯ Output Admittance hoe 1.0 100 μS fT 200 ⎯ MHz Delay Time td ⎯ 15 ns Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns Fall Time tr ⎯ 30 ns Current Gain-Bandwith Product -4 VCE = -10V, IC = -1.0mA, f = 1.0MHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: VCE = -30V, IC = -150mA, VBE(OFF) = -2.0V, IB1 = -15mA VCE = -30V, IC = -150mA, IB1 = IB2 = -15mA 5. Short duration pulse test used to minimize self-heating effect 1,000 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 200 150 100 100 10 50 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 25 DS30083 Rev. 7 - 2 2 of 4 www.diodes.com 1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 DC Current Gain vs. Collector Current MMST4403 © Diodes Incorporated 1.6 VCE COLLECTOR-EMITTER VOLTAGE (V) 30 CAPACITANCE (pF) 20 Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 REVERSE VOLTS (V) Fig. 3 Typical Capacitance I C = 10mA IC = 1mA I C = 100mA I = 300mA C IC = 30mA 1.0 0.8 0.6 0.4 0.2 1 0.1 10 100 0.01 IB BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 1,000 IC IB = 10 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.2 0 0.001 -30 0.5 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 T A = 50°C 0 1.4 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Base-Emitter Voltage vs. Collector Current 100 fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30083 Rev. 7 - 2 3 of 4 www.diodes.com MMST4403 © Diodes Incorporated Ordering Information (Note 4 and 6) Packaging SOT-323 Device MMST4403-7-F Notes: Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. K3T Date Code Key Year Code 1998 J Month Code Jan 1 1999 K 2000 L Feb 2 2001 M Mar 3 YM Marking Information 2002 N Apr 4 K3T = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P May 5 2004 R 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30083 Rev. 7 - 2 4 of 4 www.diodes.com MMST4403 © Diodes Incorporated