BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B G TOP VIEW G Mechanical Data · · · · H Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K84 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Maximum Ratings S D E · · · · C K J Drain M L Gate Source Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS £ 20KW Symbol BSS84 Units VDSS -50 V VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 1) Continuous ID -130 mA Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -50 ¾ ¾ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) VGS(th) -0.8 ¾ -2.0 V RDS (ON) ¾ ¾ 10 W VGS = -5V, ID = 0.100A gFS .05 ¾ ¾ S VDS = -25V, ID = 0.1A Input Capacitance Ciss ¾ ¾ 45 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 12 pF Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30149 Rev. 5 - 2 1 of 2 www.diodes.com BSS84 Ordering Information Notes: (Note 3) Device Packaging Shipping BSS84-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K84 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30149 Rev. 5 - 2 2 of 2 www.diodes.com BSS84