SAVANTIC BUX39 Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BUX39
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current ,high speed
APPLICATIONS
·For switching amplifiers,power gates,
switching regulators,switching circuits
converters,inverters and control circuits
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
90
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
30
A
ICM
Collector current-peak
40
A
IB
Base current
6
A
PT
Total power dissipation
120
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.46
/W
SavantIC Semiconductor
Product Specification
BUX39
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0;L=25mH
90
V
V(BR)EBO
Emitter-base breakdown votage
IE=50mA; IC=0
7
V
VCEsat-1
Collector-emitter saturation voltage
IC=12 A;IB=1.2 A
0.7
1.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=20 A;IB=2.5 A
1.25
1.6
V
Emitter-base saturation voltage
IC=20 A;IB=2.5 A
2.1
2.5
V
ICEX
Collector cut-off current
VCE=120V; VBE=-1.5V
TC=125
1.0
5.0
mA
ICEO
Collector cut-off current
VCE=70V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=12A ; VCE=4V
15
hFE-2
DC current gain
IC=20A ; VCE=4V
8
Transition frequency
IC=1A ; VCE=15V
8
VBEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
45
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=20A ;IB1=-IB2=-2.5A
VCC=30V
2
0.80
1.5
µs
0.55
1.0
µs
0.15
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BUX39
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