DIODES MMBT4403-7-F

MMBT4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT4401)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
A
B
Mechanical Data
•
•
•
•
•
•
•
C
B TOP VIEW E
E
•
•
SOT-23
Min
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
0°
8°
α
All Dimensions in mm
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
G
H
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe)
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Maximum Ratings
K
J
M
L
C
E
B
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-600
mA
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
PD
300
mW
RθJA
417
°C/W
TJ, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30058 Rev. 9 - 2
1 of 4
www.diodes.com
MMBT4403
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -100μA, IC = 0
ICEX
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
IBL
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
hFE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.40
-0.75
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
⎯
-0.95
-1.30
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Output Capacitance
Cobo
⎯
8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
kΩ
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
60
500
⎯
Output Admittance
hoe
1.0
100
μS
fT
200
⎯
MHz
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 4)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
-4
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Notes:
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
4. Short duration pulse test used to minimize self-heating effect.
1,000
VCE = 5V
TA = 150°C
Note 1
300
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
350
250
200
150
100
TA = 25°C
100
T A = -50°C
10
50
1
0
0
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
25
DS30058 Rev. 9 - 2
50
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
1
200
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MMBT4403
© Diodes Incorporated
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1.6
CAPACITANCE (pF)
f = 1MHz
Cibo
Cobo
1.4
1.2
IC = 10mA
IC = 1mA
0.8
0.6
0.4
0.2
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance
1
0.01
0.1
10
IB,BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
100
1.0
VBE(ON), BASE-EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC = 30mA
1.0
0
0.001
0.5
IC = 100mA I = 300mA
C
IC
IB = 10
0.4
0.3
T A = 50°C
T A = 150°C
0.2
0.1
TA = 25°C
0
VCE = 5V
0.9
0.8
0.7
0.6
TA = 25°C
0.5
0.4
0.3
0.2
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
TA = -50°C
TA = 150°C
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Voltage
vs. Collector Current
100
1,000
fT, GAIN-BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
DS30058 Rev. 9 - 2
3 of 4
www.diodes.com
MMBT4403
© Diodes Incorporated
Ordering Information
(Note 5)
Packaging
SOT-23
Device
MMBT4403-7-F
Notes:
5.
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K2T
K2T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
1998
J
Month
Code
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
2003
P
2004
R
May
5
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30058 Rev. 9 - 2
4 of 4
www.diodes.com
MMBT4403
© Diodes Incorporated