ON BDX34BG Darlington complementary silicon power transistor Datasheet

BDX33B, BDX33C* (NPN)
BDX34B, BDX34C* (PNP)
BDX33C and BDX34C are Preferred Devices
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
•
•
•
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
− BDX33B, 33C/34B, 34C
Monolithic Construction with Build−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
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DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
VCEO
Collector−Base Voltage
Vdc
VCB
Vdc
IC
10
15
Adc
Base Current
IB
0.25
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
70
0.56
W
W/_C
TJ, Tstg
−65 to +150
_C
Symbol
Max
Unit
RqJC
1.78
_C/W
Operating and Storage Junction
Temperature Range
2
3
Vdc
5.0
− Continuous
− Peak
1
80
100
VEB
Collector Current
TO−220AB
CASE 221A−09
STYLE 1
Unit
80
100
BDX33B, BDX34B
BDX33C, BDX34C
Emitter−Base Voltage
Value
MARKING DIAGRAM
BDX3xyG
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BDX3xy = Device Code
x = 3 or 4
y = B or C
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BDX33B/D
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
PD, POWER DISSIPATION (WATTS)
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
80
100
−
−
80
100
−
−
80
100
−
−
−
−
0.5
10
−
−
1.0
5.0
IEBO
−
10
mAdc
hFE
750
−
−
VCE(sat)
−
2.5
Vdc
VBE(on)
−
2.5
Vdc
VF
−
4.0
Vdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
BDX33B/BDX34B
BDX33C/BDX34C
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, RBE = 100)
VCER(sus)
BDX33B/BDX34B
BDX33C/BDX33C
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)
Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0)
Collector Cutoff Current
(VCB = rated VCBO, IE = 0)
Vdc
Vdc
VCEX(sus)
BDX33B/BDX34B
BDX33C/BDX34C
Vdc
ICEO
TC = 25_C
TC = 100_C
mAdc
ICBO
TC = 25_C
TC = 100_C
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
BDX33B, 33C/34B, 34C
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
BDX33B, 33C/34B, 34C
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
BDX33B, 33C/34B, 34C
Diode Forward Voltage
(IC = 8.0 Adc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
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2
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
0.02
t1
0.03
0.01
0.02
0.01
0.01
0.02 0.03
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
SINGLE
PULSE
t2
DUTY CYCLE, D = t1/t2
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 1. Thermal Response
500 ms
IC, COLLECTOR CURRENT (AMP)
10
5.0 ms
1.0 ms
5.0
TC = 25°C
2.0
1.0
20
100
ms
IC, COLLECTOR CURRENT (AMP)
20
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.5
0.2
0.1
0.05
0.02
1.0
500 ms
10
5.0 ms
1.0 ms
5.0
2.0
1.0
0.5
0.2
0.1
TC = 25°C
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
BDX34B
BDX34C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.02
1.0
70 100
100
ms
BDX33B
BDX33C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Active−Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE limits
of the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 3 is based on TJ(pk)
= 150_C; TC is variable depending on conditions. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150_C. TJ(pk) may be calculated from the
data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
300
1000
500
300
200
TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
10
TJ = 25°C
200
C, CAPACITANCE (pF)
hFE , SMALL−SIGNAL CURRENT GAIN
10,000
5000
3000
2000
2.0
5.0
Cib
70
50
PNP
NPN
1.0
Cob
100
10
20
50 100
f, FREQUENCY (kHz)
200
30
0.1
500 1000
Figure 3. Small−Signal Current Gain
PNP
NPN
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
50
100
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
NPN
BDX33B, 33C
PNP
BDX34B, 34C
20,000
20,000
VCE = 4.0 V
VCE = 4.0 V
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
TJ = 150°C
5000
3000
2000
25°C
1000
−55 °C
5000
2000
500
300
200
300
200
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
25°C
1000
500
0.1
TJ = 150°C
3000
5.0 7.0 10
−55 °C
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. DC Current Gain
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
0.3
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
Figure 6. Collector Saturation Region
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
2.5
2.0
1.5
VBE @ VCE = 4.0 V
1.0
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
0.5
10
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages
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4
5.0 7.0
10
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
ORDERING INFORMATION
Device
BDX33B
BDX33BG
BDX33C
BDX33CG
BDX34B
BDX34BG
BDX34C
BDX34CG
Package
Shipping †
TO−220
TO−220
(Pb−Free)
50 Units / Rail
TO−220
TO−220
(Pb−Free)
50 Units / Rail
TO−220
TO−220
(Pb−Free)
50 Units / Rail
TO−220
TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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BDX33B/D
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