FZT788B - (Volts) 1.4 1.2 IC/IB=200 IC/IB=100 IC/IB=10 1.8 Tamb=25°C 1.0 0.8 V V 1.4 1.2 0.4 0.01 0.1 1 IC - Collector Current (Amps) 1.0 0.4 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC 0.4 0.2 300 - (Volts) 600 0.6 1.4 IC/IB=200 0.01 0.1 10 1 ICM -8 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C IC=-10mA* IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-10V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.25 -0.45 -0.5 V V V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-3A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-1A, IB=-5mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 500 400 300 150 Transition Frequency fT 100 Input Capacitance Cibo 225 Output Capacitance Cobo Switching Times ton toff 0.01 0.1 1 10 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 245 Peak Pulse Current V 0.01 0.1 VBE(on) v IC V -5 0.4 0.2 IC - Collector Current (Amps) -5 V(BR)EBO 10 10 VEBO Emitter-Base Breakdown Voltage 0.4 0.1 1 V Emitter-Base Voltage V 1 0.1 -15 -15 VBE(sat) v IC 0.01 -15 VCEO Collector-Emitter Breakdown Voltage V(BR)CEO 0.8 0.8 0 VCBO V 1.0 0 V Collector-Base Voltage Collector-Emitter Voltage -15 hFE v IC 0.6 UNIT Collector-Base Breakdown Voltage V(BR)CBO IC - Collector Current (Amps) 1.2 VALUE PARAMETER 0 VCE=2V SYMBOL 1.0 IC - Collector Current (Amps) -55°C +25°C +100°C PARAMETER 1.2 0.2 0 0 C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.6 V 0.8 1.4 - (Volts) - Typical Gain 1.0 -55°C +25°C +100°C +175°C 1.6 1200 900 1.6 V VCE=2V h - Normalised Gain h 1.4 1.2 10 VCE(sat) v IC +100°C +25°C -55°C 1.6 E ABSOLUTE MAXIMUM RATINGS. 0.8 0.2 0 10 C APPLICATIONS * Battery powered circuits COMPLEMENTAY TYPE FZT688B PARTMARKING DETAIL FZT788B IC/IB=200 0.6 0.6 0.2 0 -55°C +25°C +100°C +175°C 1.6 - (Volts) 1.8 FZT788B ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage TYPICAL CHARACTERISTICS 1.6 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 100 SYMBOL MIN. TYP. MAX. UNIT -0.75 1500 IC=-100µA IC=-10mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz pF VEB=-0.5V, f=1MHz 25 pF VCB=-10V, f=1MHz 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 244 CONDITIONS. FZT788B - (Volts) 1.4 1.2 IC/IB=200 IC/IB=100 IC/IB=10 1.8 Tamb=25°C 1.0 0.8 V V 1.4 1.2 0.4 0.01 0.1 1 IC - Collector Current (Amps) 1.0 0.4 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC 0.4 0.2 300 - (Volts) 600 0.6 1.4 IC/IB=200 0.01 0.1 10 1 ICM -8 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C IC=-10mA* IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-10V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.25 -0.45 -0.5 V V V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-3A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-1A, IB=-5mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 500 400 300 150 Transition Frequency fT 100 Input Capacitance Cibo 225 Output Capacitance Cobo Switching Times ton toff 0.01 0.1 1 10 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 245 Peak Pulse Current V 0.01 0.1 VBE(on) v IC V -5 0.4 0.2 IC - Collector Current (Amps) -5 V(BR)EBO 10 10 VEBO Emitter-Base Breakdown Voltage 0.4 0.1 1 V Emitter-Base Voltage V 1 0.1 -15 -15 VBE(sat) v IC 0.01 -15 VCEO Collector-Emitter Breakdown Voltage V(BR)CEO 0.8 0.8 0 VCBO V 1.0 0 V Collector-Base Voltage Collector-Emitter Voltage -15 hFE v IC 0.6 UNIT Collector-Base Breakdown Voltage V(BR)CBO IC - Collector Current (Amps) 1.2 VALUE PARAMETER 0 VCE=2V SYMBOL 1.0 IC - Collector Current (Amps) -55°C +25°C +100°C PARAMETER 1.2 0.2 0 0 C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.6 V 0.8 1.4 - (Volts) - Typical Gain 1.0 -55°C +25°C +100°C +175°C 1.6 1200 900 1.6 V VCE=2V h - Normalised Gain h 1.4 1.2 10 VCE(sat) v IC +100°C +25°C -55°C 1.6 E ABSOLUTE MAXIMUM RATINGS. 0.8 0.2 0 10 C APPLICATIONS * Battery powered circuits COMPLEMENTAY TYPE FZT688B PARTMARKING DETAIL FZT788B IC/IB=200 0.6 0.6 0.2 0 -55°C +25°C +100°C +175°C 1.6 - (Volts) 1.8 FZT788B ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage TYPICAL CHARACTERISTICS 1.6 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 100 SYMBOL MIN. TYP. MAX. UNIT -0.75 1500 IC=-100µA IC=-10mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz pF VEB=-0.5V, f=1MHz 25 pF VCB=-10V, f=1MHz 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 244 CONDITIONS.