MBD701, MMBD701L, SMMBD701L Silicon Hot-Carrier Diodes Schottky Barrier Diodes www.onsemi.com These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features • • • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.0 pF @ VR = 20 V High Reverse Voltage − to 70 V Low Reverse Leakage − 200 nA (Max) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 V Forward Power Dissipation @ TA = 25°C MBD701 MMBD701L, SMMBD701L PF mW 280 200 Derate above 25°C MBD701 MMBD701L, SMMBD701L mW/°C 2.8 2.0 Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 7 1 TO−92 2−Lead CASE 182 STYLE 1 SOT−23 (TO−236) CASE 318 STYLE 8 TO−92 SOT−23 2 CATHODE 1 ANODE 3 CATHODE 1 ANODE MARKING DIAGRAMS MBD 701 AYW G G 5H M G G 1 TO−92 SOT−23 A = Assembly Location Y = Year W = Work Week 5H = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MBD701/D MBD701, MMBD701L, SMMBD701L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Symbol Min Typ Max 70 − − − 0.5 1.0 − 9.0 200 − 0.42 0.5 − 0.7 1.0 V(BR)R Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 CT Reverse Leakage (VR = 35 V) Figure 3 IR Forward Voltage (IF = 1.0 mAdc) Figure 4 VF Forward Voltage (IF = 10 mAdc) Figure 4 VF Unit V pF nAdc Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Package Shipping† MBD701G TO−92 (Pb−Free) 1,000 Units / Bulk MMBD701LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBD701LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBD701LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MBD701, MMBD701L, SMMBD701L TYPICAL ELECTRICAL CHARACTERISTICS 500 2.0 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 Figure 1. Total Capacitance 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 30 40 50 60 70 IF, FORWARD CURRENT (mA) Figure 2. Minority Carrier Lifetime 10 TA = 100°C 1.0 TA = 75°C 0.1 0.01 0.001 20 TA = 25°C 10 TA = -40°C TA = 85°C 1.0 TA = 25°C 0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0 Figure 3. Reverse Leakage IF(PEAK) 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 3 SAMPLING OSCILLOSCOPE (50 W INPUT) 2.0 MBD701, MMBD701L, SMMBD701L PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE D ÉÉ ÉÉ L P J K SECTION X−X X X D G H V 1 2 C DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- STYLE 1: PIN 1. ANODE 2. CATHODE N N www.onsemi.com 4 MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- MBD701, MMBD701L, SMMBD701L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 ° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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