2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 3 and 4) Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • SOT-363 TOP VIEW D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Value 60 60 ±20 ±40 115 73 800 Units V V Value 200 1.60 625 -55 to +150 Units mW mW/°C °C/W °C V mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation Derating above TA = 25°C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol VDSS VDGR Symbol PD RθJA TJ, TSTG 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 2N7002DW Document number: DS30120 Rev. 12 - 2 1 of 4 www.diodes.com August 2010 © Diodes Incorporated 2N7002DW Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance @ TC = 25°C @ TC = 125°C @ TJ = 25°C @ TJ = 125°C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS 60 70 V VGS = 0V, ID = 10μA IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ⎯ 1.0 500 ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ⎯ 3.2 4.4 2.0 V 7.5 13.5 Ω VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS = 10V, ID = 0.2A RDS (ON) ⎯ ID(ON) gFS 0.5 80 1.0 ⎯ ⎯ ⎯ A mS Ciss Coss Crss ⎯ ⎯ ⎯ 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 5. Short duration pulse test used to minimize self-heating effect. 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 4 3 2 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 0 0 5 2.0 1.5 1.0 0.5 0 -55 6 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs. Junction Temperature 2N7002DW Document number: DS30120 Rev. 12 - 2 2 of 4 www.diodes.com 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage August 2010 © Diodes Incorporated 2N7002DW Ordering Information (Note 6) Part Number 2N7002DW-7-F Notes: Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K72 YM Date Code Key Year 1998 Code J 1999 K 2000 L K72 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YM K72 2001 M 2002 N 2003 P 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D L F Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X 2N7002DW Document number: DS30120 Rev. 12 - 2 3 of 4 www.diodes.com August 2010 © Diodes Incorporated 2N7002DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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