DIODES MMBTA28

MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
SOT-23
A
C
B
C
B TOP VIEW E
Mechanical Data
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•
•
•
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•
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Maximum Ratings
G
H
K
J
M
L
C
Max
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0°
8°
All Dimensions in mm
E
B
Min
A
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Notes:
D
E
Dim
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
Value
80
80
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
ICES
IEBO
80
12
80
⎯
⎯
⎯
⎯
⎯
⎯
100
500
100
V
V
V
nA
nA
nA
IC = 100μA IE = 0
IE = 100μA IC = 0
IC = 100μA IB = 0
VCB = 60V, IE = 0
VCE = 10V
VEB = 10V, IC = 0
10,000
10,000
⎯
⎯
⎯
⎯
1.5
2.0
V
V
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, IB = 100μA
IC = 100mA, VCE = 5.0V
hFE
VCE(SAT)
VBE(SAT)
8.0 Typical
15 Typical
Cobo
Cibo
fT
125
⎯
pF
pF
MHz
Test Condition
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 5.0V, IC = 10mA,
f = 100MHz
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30367 Rev. 9 - 2
1 of 3
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MMBTA28
© Diodes Incorporated
400
VCE(SAT), COLLECTOR-EMITTER SATURATION
VOLTAGE (V)
1.1
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
0
0.8
TA = 25°C
0.7
0.6
TA = 150°C
0.5
0.4
0.3
0.2
0.1
0
100
1,000
10
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000,000
1.5
1.4
VCE = 5V
VCE = 5V
TA = -50°C
1.3
hFE, DC CURRENT GAIN
VBE(ON), BASE-EMITTER VOLTAGE (V)
T A = -50°C
0.9
1
25
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs.
Ambient Temperature
1.6
IC
IB = 1000
1.0
1.2
1.1
TA = 25°C
1.0
0.9
0.8
0.7
TA = 150°C
0.6
100,000
TA = 150°C
T A = 25°C
10,000
TA = -50°C
1,000
0.5
0.4
0.3
100
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Base-Emitter Voltage
vs. Collector Current
100
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain
vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
VCE = 5V
100
10
1
1
DS30367 Rev. 9 - 2
10
COLLECTOR CURRENT IC (mA)
Fig. 5 Typical Gain Bandwidth Product
vs. Collector Current
100
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MMBTA28
© Diodes Incorporated
Ordering Information
(Note 5)
Part Number
MMBTA28-7-F
Notes:
Packaging
SOT-23
Shipping
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
Code
2006
T
2007
U
YM
K6R
K6R = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30367 Rev. 9 - 2
3 of 3
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MMBTA28
© Diodes Incorporated