BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current 100 150 200 200 IF DC Forward Current 500 mA if Recurrent Peak Forward Current 600 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 4.0 -65 to +200 A A °C TJ Operating Junction Temperature 175 °C BAV19 BAV20 BAV21 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 2000 Fairchild Semiconductor International Max Units BAV19 / 20 / 21 500 3.33 300 mW mW/°C °C/W BAV19/20/21, Rev. A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter BV Breakdown Voltage IR Reverse Current Test Conditions BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 VF Forward Voltage CO Diode Capacitance TRR Reverse Recovery Time IR = 100 µA IR = 100 µA IR = 100 µA VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = 150 V, TA = 150°C VR = 200 V VR = 200 V, TA = 150°C IF = 100 mA IF = 200 mA VR = 0, f = 1.0 MHz Min Max Units 100 100 100 100 100 100 1.0 1.25 5.0 V V V nA µA nA µA nA µA V V pF 50 nS 120 200 250 IF = IR = 30 mA, IRR = 3.0 mA, RL = 100Ω Typical Characteristics Ta= 25°C 300 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 50 Ta= 25°C 40 30 20 10 0 55 100 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature REVERSE CURRENT vs REVERSE VOLTAGE IR - 180 to 255 V FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA F F - FORWARD VOLTAGE (mV) VV 275 IIRR - REVERSE CURRENT (nA) 325 REVERSE CURRENT vs REVERSE VOLTAGE IR - 55 to 205 V IIRR - REVERSE CURRENT (nA) VR - REVERSE VOLTAGE (V) V R REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 100 90 Ta= 25°C 80 70 60 50 40 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 255 Ta= 25°C 450 400 350 300 250 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (continued) Typical Characteristics (continued) 725 Ta= 25°C 700 650 600 550 500 450 0.1 FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA VVFF - FORWARD VOLTAGE (mV) VFF - FORWARD VOLTAGE (mV) V FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 Ta= 25°C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 1.3 600 Ta= 25°C 400 Ta= +80°C 500 800 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 IFI F - FORWARD CURRENT (mA) 3 10 0 2 50 I - CURRENT (mA) 500 40 30 20 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 3 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (T A) REVERSE RECOVERY TIME vs REVERSE RECOVERY CURRENT (Irr) REVERSE RECOVERY (nS) 30 50 100 200 300 IF - FORWARD CURRENT (mA) Ta= 25°C 800 Ta= -40°C 20 CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V CAPACITANCE (pF) VFF - FORWARD VOLTAGE (mV) V Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to + 80 Deg C) 1.4 IR 400 300 CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 -F OR WA RD 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (continued) Typical Characteristics (continued) POWER DERATING CURVE PD - POWER DISSIPATION (mW) 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode DO-35 Tape and Reel Data and Package Dimensions DO-35 Packaging Configuration: Figure 1.0 Soabar Label Corrugated Outer Liner White (Anode) Red/Blue (Cathode) T50R TNR Options Kraft Paper Wound Between Layers DO-35 Packaging Information Table: Figure 2.0 DO-35 Packaging Information Soabar Label sample Packaging Option T50R T50A Packaging type TNR Ammo Standard (no flow code) Bag 10,000 5,000 500 13 - - TYPE IN5225A MARK 52 - REV A2 PART No. Qty per Reel/Tube/Bag Reel Size (inch diameter) Inside Tape Spacing (mm) Int Box Dimension (mm) 52 P.O. No. PKG 254x79x794 406x267x184 279x133x108 Max qty per Box 30,000 50,000 5,000 QTY Weight per unit (gm) 0.137 0.137 0.137 Q.C. Weight per Reel/Ammo (kg) 2.23 0.800 Note/Comments BLK-BRN EC No. 10,000 M.O. No. OX5046F035 DATE D9903 MFD. UNDER US PAT 3.025.589 & OTHER US PATS & APPLICATIONS Bulk DO-35 Reel Dimensions: Figure 3.0 Soabar Label REEL DIMENSIONS ITEM DESCRIPTION SYMBOL MINIMUM MAXIMUM Reel Diameter D1 10.375 10.625 Arbor Hole Diameter (Standard) D2 1.245 1.255 Core Diameter D3 3.190 3.310 Flange to Flange Inner Width W1 D1 D2 3.400 Note: All Dimensions are in inches W1 D3 September 1999, Rev. A DO-35 Tape and Ammo Data and Package Dimensions DO-35 Ammo Packing Configuration: Figure 4.0 Soabar Label (on top of box) 254mm x 79mm x 79mm Intermediate Container (5,000 cap) T50A Option DO-35 Taping Dimension: Figure 5.0 H TAPING DIMENSIONS G L1 F B L2 E C A INCH MM MILS NOTES A 2.520 +0.066/ -0.027 64.00 +1.69/ -0.69 2519 +66.5/ -27.0 Overall width B 2.047±0.027 52 ±0.69 2047±27 Inside Tape Spacing C 0.200 ±0.0157 5.08 ±0.40 200 ±15.7 Component Pitch D 0.047(max) 1.2(max) 47(max) Component Misalignment E 0.022(max) 0.55(max) 22(max) Tape Mismatch F 0.027(max) ±0.69 ±27 Units in line w/ one another G 0.126(min) 3.2(min) 126(min) Lead amount between tapes H 0 0 0 Lead amount beyond tapes L1-L2 ±0.027 ±0.69 ±27 Delta between two leads D DO-35 Bulk Packing Configuration: Figure 6.0 102mm x 76mm x 127mm Immediate Box (1,000 cap) 133mm x 95mm Anti-static bag (500/bag) September 1999, Rev. A DO-35 Tape and Reel Data and Package Dimensions, continued DO-35 (FS PKG Code D2) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in millimeters Part Weight per unit (gram): 0.137 March 2000, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1