STMicroelectronics BUL39 High voltage fast-switching npn power transistor Datasheet

BUL39D
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
HIGH RUGGEDNESS
APPLICATIONS
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
■ SWITCH MODE POWER SUPPLIES
■
DESCRIPTION
The BUL39D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining wide RBSOA.
The BUL series is designed for use in electronics
transformers for halogen lamps.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
850
V
V CEO
Collector-Emitter Voltage (IB = 0)
450
V
V EBO
Emitter-Base Voltage (IC = 0)
9
V
Collector Current
4
A
IC
I CM
IB
Collector Peak Current (t p <5 ms)
8
A
Base Current
2
A
4
A
I BM
Base Peak Current (t p <5 ms)
P tot
o
Total Dissipation at Tc = 25 C
T stg
Storage Temperature
Tj
June 1998
Max. Operating Junction Temperature
70
W
-65 to 150
o
C
150
o
C
1/6
BUL39D
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
1.78
70
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
I CES
Collector Cut-off
Current (V BE = 0)
V CE = rated V CES
V CE = rated V CES
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 9 V
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
L = 25 mH
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 1 A
I C = 2.5 A
I B = 0.2 A
I B = 0.5 A
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 1 A
I C = 2.5 A
I B = 0.2 A
I B = 0.5 A
h FE ∗
DC Current Gain
IC = 5 A
I C = 10 mA
V CE = 10 V
V CE = 5 V
4
10
V CEW
Maximum Collector
Emitter Voltage
Without Snubber
IC = 6 A
V BB = -2.5 V
t p = 10 µs
R BB = 0 Ω
L = 50µH
450
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 2.5 A
V BE(off) = -5 V
V CL = 300 V
I Bon = 0.5 A
R BB = 0 Ω
L = 1 mH
Vf
Diode Forward Voltage
IC = 2 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
Typ.
T j = 125 o C
Max.
Unit
100
500
µA
µA
100
µA
450
V
0.13
0.5
1.1
V
V
1.1
1.3
V
V
V
0.7
50
1.5
100
µs
ns
1.5
V
BUL39D
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BUL39D
Inductive Fall Time
Reverse Biased SOA
4/6
Inductive Storage Time
BUL39D
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/6
BUL39D
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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