ASF153 ASF153 Data Sheet 3.3 V IF Gain Block Amplifier MMIC over DC~1000 MHz 1. Product Overview 1.1 General Description ASF153, 3.3V internally matched IF gain block amplifier MMIC, has excellent input and output return loss, high linearity, and low noise over a wide range of frequency DC~1000 MHz, being suitable for use in both receiver and transmitter of telecommunication systems up to 1 GHz. The amplifier is available in a SOT89 package and passes through the stringent 100% DC & RF test via an automated test handler. 1.2 Features 22.6 dB Gain at 150 MHz 20 dBm P1dB at 150 MHz 38 dBm Output IP3 at 150 MHz 2.0 dB NF at 150 MHz MTTF > 100 Years Minimum External Matching Components Single Supply: +3.3 V 1.3 Applications Base Station Infrastructure Repeater Telecommunication System 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4.0 mm2, surface mount 1/11 ASB Inc. [email protected] RoHS-compliant February 2017 ASF153 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz Gain 22.7 22.6 22.4 22.1 20.8 dB S11 -18 -21 -20 -17 -10 dB S22 -25 -25 -25 -21 -11 dB Noise Figure 1.7 2.0 2.0 2.0 2.0 dB IP31) 37 38 38 36 34 dBm Output P1dB 20 20 20 20 19 dBm Current 87 mA Device Voltage +3.3 V Output 1) OIP3 is measured with two tones at the output power of +5 dBm/tone separated by 1 MHz. 2.2 Product Specification Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typ Max Unit Frequency 150 MHz Gain 22.6 dB S11 -21 dB S22 -25 dB Noise Figure 2.0 dB Output IP3 38 dBm Output P1dB 20 dBm Current 87 mA Device Voltage +3.3 V 2.3 2/11 Min Pin Configuration Pin Description 1 RF_IN 2 Ground 3 RF_OUT & Bias ASB Inc. Simplified Outline [email protected] February 2017 ASF153 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 45 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 ~ 1000 V MM Class A Voltage Level: <200 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/11 ASB Inc. [email protected] February 2017 ASF153 3. Application: 50 ~ 1000 MHz (IF, Vsupply = +3.3 V) 3.1 Application Circuit & Evaluation Board Vdevice = +3.3 V C4 C3 L1 C1 RF IN C2 RF OUT ASF153 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A2 Bill of Material 4/11 Symbol Value Size Description Manufacturer ASF153 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 100 pF 0603 Bypass capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 680 nH 0603 RF choke inductor Samsung ASB Inc. [email protected] February 2017 ASF153 3.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz Gain 22.7 22.6 22.4 22.1 20.8 dB S11 -18 -21 -20 -17 -10 dB S22 -25 -25 -25 -21 -11 dB Noise Figure 1.7 2.0 2.0 2.0 2.0 dB Output IP31) 37 38 38 36 34 dBm Output P1dB 20 20 20 20 19 dBm Current 87 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +5 dBm/tone separated by 1 MHz. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S11 S22 0 5/11 200 ASB Inc. S12 K 400 600 Frequency (MHz) [email protected] 800 10 9 8 7 6 5 4 3 2 1 0 1000 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 3.3 February 2017 ASF153 Plots of Noise Figure, ACLR (for LTE) and Performances with Temperature 5 -40 4 -45 ACLR (dBc) NF (dB) 3.4 3 NF 2 1 -50 20 MHz BW -55 -60 10 MHz BW -65 0 -70 0 200 400 600 Frequency (MHz) 800 1000 0 2 4 6 8 Output Power (dBm) 10 12 Note that ACLR test conditions are as follows; 1) Test Source: LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 140 MHz 2) Test Source: LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 140 MHz 6/11 ASB Inc. [email protected] February 2017 ASF153 95 Current (mA) 90 85 80 75 70 -60 30 -40 -20 60 80 100 5 Frequency = 150 MHz Frequency = 150 MHz 25 4 20 NF (dB) Gain (dB) 0 20 40 Temperature (°C) 15 3 2 10 1 5 0 0 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 24 Frequency = 150 MHz P1dB (dBm) 22 20 18 16 14 -60 7/11 ASB Inc. [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 February 2017 ASF153 4. Application: 5 ~ 1000 MHz (75 CATV, Vsupply = +3.3 V) 4.1 Application Circuit & Evaluation Board Vdevice = +3.3 V C3 L2 L1 RF IN C2 C1 RF OUT ASF153 L3 R1 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-B2 Bill of Material 8/11 Symbol Value Size Description Manufacturer ASF153 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 10 F 0805 Decoupling capacitor Murata L1, L2 1 H 1206 RF choke inductor Murata L3 4.7 H 0603 Matching inductor Samsung R1 150 0603 Matching resistor Samsung ASB Inc. [email protected] February 2017 ASF153 4.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 5 500 1000 MHz Gain 22.3 21.5 20.0 dB S11 -10 -10 -9 dB S22 -7 -18 -10 dB Noise Figure 4.0 2.4 2.6 dB Output IP31) 29 34 32 dBm Output IP21),2) 44 51 44 dBm Output P1dB 14 18 17 dBm Current 87 mA Device Voltage +3.3 V 1) OIP3 and OIP2 are measured with two tones at the output power of +5 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1 + F2 Frequency. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S11 S22 S12 K 0 9/11 200 ASB Inc. 400 600 Frequency (MHz) [email protected] 800 10 9 8 7 6 5 4 3 2 1 0 1000 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 4.3 February 2017 ASF153 5. Package Outline (SOT89, 4.5x4.0x1.5 mm) Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASF153 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 6. Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 10/11 ASB Inc. [email protected] February 2017 ASF153 7. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2013-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 11/11 ASB Inc. [email protected] February 2017