ON MC14070BDR2G Quad exclusive "or" and "nor" gate Datasheet

MC14070B, MC14077B
CMOS SSI
Quad Exclusive “OR” and “NOR” Gates
The MC14070B quad exclusive OR gate and the MC14077B quad
exclusive NOR gate are constructed with MOS P−channel and
N−channel enhancement mode devices in a single monolithic
structure. These complementary MOS logic gates find primary use
where low power dissipation and/or high noise immunity is desired.
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Features
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• All Outputs Buffered
• Capable of Driving Two Low−Power TTL Loads or One
•
•
•
•
•
SOIC−14
D SUFFIX
CASE 751A
Low−Power Schottky TTL Load Over the Rated Temperature
Range
Double Diode Protection on All Inputs
MC14070B − Replacement for CD4030B and CD4070B Types
MC14077B − Replacement for CD4077B Type
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
PIN ASSIGNMENT
IN 1A
1
14
VDD
IN 2A
2
13
IN 2D
OUTA
3
12
IN 1D
OUTB
4
11
OUTD
IN 1B
5
10
OUTC
IN 2B
6
9
IN 2C
VSS
7
8
IN 1C
MAXIMUM RATINGS (Voltages Referenced to VSS)
Value
Unit
−0.5 to +18.0
V
−0.5 to VDD + 0.5
V
Input or Output Current
(DC or Transient) per Pin
±10
mA
PD
Power Dissipation, per Package
(Note 1)
500
mW
TA
Ambient Temperature Range
−55 to +125
°C
Tstg
Storage Temperature Range
−65 to +150
°C
TL
Lead Temperature
(8−Second Soldering)
260
°C
Symbol
VDD
Vin, Vout
Iin, Iout
Parameter
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
MARKING DIAGRAM
14
140xxBG
AWLYWW
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
xx
A
WL, L
YY, Y
WW, W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS ≤ (Vin or Vout) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either VSS or VDD). Unused outputs must be left open.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 10
1
Publication Order Number:
MC14070B/D
MC14070B, MC14077B
MC14070B
QUAD Exclusive OR
Gate
MC14077B
QUAD Exclusive NOR
Gate
1
1
3
3
2
5
2
5
4
4
6
8
6
8
10
9
12
10
9
12
11
11
13
13
VDD = PIN 14
VSS = PIN 7
(BOTH DEVICES)
20 ns
20 ns
VDD
Vin
IDD
Vin
VDD
90%
50%
10%
VSS
1/f
50% DUTY CYCLE
*
CL
*Inverted output on MC14077B only.
Figure 1. Power Dissipation Test Circuit and Waveform
PULSE
GENERATOR
INPUT
*
#
VSS
20 ns
20 ns
VDD
tPLH
tPHL
CL
OUTPUT
90%
50%
10%
tTHL
*Inverted output on MC14077B only.
#Connect unused input to VDD for MC14070B, to VSS for MC14077B.
Figure 2. Switching Time Test Circuit and Waveforms
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2
VDD
90%
50%
10%
tTLH
VSS
VOH
VOL
MC14070B, MC14077B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
−55_C
Characteristic
Output Voltage
Vin = VDD or 0
Symbol
25_C
VDD
Vdc
Min
Max
Min
Typ
(Note 2)
125_C
Max
Min
Max
Unit
“0” Level
VOL
5.0
10
15
−
−
−
0.05
0.05
0.05
−
−
−
0
0
0
0.05
0.05
0.05
−
−
−
0.05
0.05
0.05
Vdc
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
−
−
−
4.95
9.95
14.95
5.0
10
15
−
−
−
4.95
9.95
14.95
−
−
−
Vdc
“0” Level
VIL
5.0
10
15
−
−
−
1.5
3.0
4.0
−
−
−
2.25
4.50
6.75
1.5
3.0
4.0
−
−
−
1.5
3.0
4.0
5.0
10
15
3.5
7.0
11
−
−
−
3.5
7.0
11
2.75
5.50
8.25
−
−
−
3.5
7.0
11
−
−
−
5.0
5.0
10
15
–3.0
–0.64
–1.6
–4.2
−
−
−
−
–2.4
–0.51
–1.3
–3.4
–4.2
–0.88
–2.25
–8.8
−
−
−
−
–1.7
–0.36
–0.9
–2.4
−
−
−
−
IOL
5.0
10
15
0.64
1.6
4.2
−
−
−
0.51
1.3
3.4
0.88
2.25
8.8
−
−
−
0.36
0.9
2.4
−
−
−
mAdc
Input Current
Iin
15
−
±0.1
−
±0.00001
±0.1
−
±1.0
mAdc
Input Capacitance
(Vin = 0)
Cin
−
−
−
−
5.0
7.5
−
−
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
−
−
−
0.25
0.5
1.0
−
−
−
0.0005
0.0010
0.0015
0.25
0.5
1.0
−
−
−
7.5
15
30
mAdc
Total Supply Current (Notes 3 & 4)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all buffers
switching)
IT
5.0
10
15
Output Rise and Fall Times (Note 3)
(CL = 50 pF)
tTLH, tTHL = (1.35 ns/pF) CL + 33 ns
tTLH, tTHL = (0.60 ns/pF) CL + 20 ns
tTLH, tTHL = (0.40 ns/pF) CL + 20 ns
tTLH,
tTHL
Propagation Delay Times (Note 3)
(CL = 50 pF)
tPLH, tPHL = (0.90 ns/pF) CL + 130 ns
tPLH, tPHL = (0.36 ns/pF) CL + 57 ns
tPLH, tPHL = (0.26 ns/pF) CL + 37 ns
tPLH,
tPHL
Vin = 0 or VDD
Input Voltage
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
“1” Level
VIH
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Vdc
Vdc
IOH
Source
Sink
mAdc
IT = (0.3 mA/kHz) f + IDD
IT = (0.6 mA/kHz) f + IDD
IT = (0.9 mA/kHz) f + IDD
mAdc
ns
5.0
10
15
−
−
−
−
−
−
−
−
−
100
50
40
200
100
80
−
−
−
−
−
−
ns
5.0
10
15
−
−
−
−
−
−
−
−
−
175
75
55
350
150
110
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in mH (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
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3
MC14070B, MC14077B
ORDERING INFORMATION
Package
Shipping†
MC14070BDG
SOIC−14
(Pb−Free)
55 Units / Rail
MC14070BDR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
NLV14070BDR2G*
SOIC−14
(Pb−Free)
2500 / Tape & Reel
MC14077BDG
SOIC−14
(Pb−Free)
55 Units / Rail
MC14077BDR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
NLV14077BDR2G*
SOIC−14
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
MC14070B, MC14077B
PACKAGE DIMENSIONS
D
SOIC−14 NB
CASE 751A−03
ISSUE K
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
b
0.25
M
C A
S
B
S
e
DETAIL A
h
A
X 45 _
M
A1
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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For additional information, please contact your local
Sales Representative
MC14070B/D
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