SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M FEATURES ·For Complementary With NPN Type BC846W/847W/848W. B M D J G A 2 3 1 P SYMBOL RATING -80 BC856W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage BC857W UNIT C CHARACTERISTIC L MAXIMUM RATING (Ta=25℃) VCBO -50 BC858W -30 BC856W -65 H N N K DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 _ 0.10 0.42 + 0.10 MIN 0.1 MAX V 1. EMITTER 2. BASE 3. COLLECTOR BC857W VCEO -45 BC858W -30 BC856W -5 BC857W VEBO V USM -5 BC858W V -5 Collector Current IC -100 mA Emitter Current IE 100 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range Marking Lot No. Type Name MARK SPEC TYPE BC856W-A BC856W-B BC857W-A BC857W-B BC857W-C BC858W-A BC858W-B BC858W-C MARK 3A 3B 3E 3F 3G 3J 3K 3L 2008. 8. 29 Revision No : 4 1/3 BC856W/7W/8W ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=-30V, IE=0 BC856W BC857W DC Current Gain (Note) hFE VCE=-5V, IC=-2mA BC858W MIN. TYP. MAX. UNIT - - -15 nA 125 - 475 125 - 800 125 - 800 VCE(sat) 1 IC=-10mA, IB=-0.5mA - -0.09 -0.3 VCE(sat) 2 IC=-100mA, IB=-5mA - -0.25 -0.65 VBE(sat) 1 IC=-10mA, IB=-0.5mA - -0.7 - VBE(sat) 2 IC=-100mA, IB=-5mA - -0.9 - Base-Emitter Voltage VBE(ON1) VCE=-5V, IC=-2mA -0.6 -0.65 -0.75 V Base-Emitter Voltage VBE(ON2) VCE=-5V, IC=-10mA - - -0.82 V Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 150 - MHz VCB=-10V, IE=0, f=1MHz - 4.5 - pF - 2.0 10 dB Collector-Emitter Saturation Voltage V V Base-Emitter Saturation Voltage Cob Collector Output Capacitance VCE=-6V, IC=-0.2mA Noise Figure NF Rg=2kΩ, f=1kHz NOTE : According to the value of hFE the BC856, BC857, BC858 are classified as follows. CLASSIFICATION hFE 2008. 8. 29 A B C BC856W 125～250 220～475 - BC857W 125～250 220～475 420～800 BC858W 125～250 220～475 420～800 Revision No : 4 2/3 BC856W/7W/8W I C - V BE -50 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V CE I B =-400µA I B =-350µA I B =-300µA I B =-250µA -40 -30 I B =-200µA I B =-150µA -20 I B =-100µA I B =-50µA -10 0 V CE =-5V -50 -30 -10 -5 -3 -1 -0.5 -0.3 -0.1 0 -4 -8 -12 -16 -20 -0.2 COLLECTOR-EMITTER VOLTAGE V CE (V) -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) h FE - I C VBE(sat) , V CE(sat) - I C 1k -10 I C /I B =20 V CE =-5V 500 SATURATION VOLTAGE V BE(sat) , VCE(sat) (V) DC CURRENT GAIN h FE -0.4 300 100 50 30 10 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) -3 -1 VBE(sat) -0.3 -0.1 V CE(sat) -0.03 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) C ob - V CB CAPACITANCE C ob (pF) 20 f=1MHz I E =0 10 5 3 1 -1 -3 -10 -30 -100 -200 COLLECTOR-BASE VOLTAGE V CB (V) 2008. 8. 29 Revision No : 4 3/3