DIODES BC847A

BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
General Purpose Transistor
NPN Silicon
*Moisture Sensitivity Level: 1
*ESD Rating - Human Body Model:>4000V
-Machine Model:>400V
COLLECTOR
3
3
MARKING DIAGRAM
3
XX = Device
Code (See
Table Below)
1
1
BASE
2
SOT-23
1
2
EMITTER
2
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC847,
BC848,
Collector-Base Voltage
BC847,
BC848,
Emitter-Base VOltage
BC846
BC850
BC849
BC846
BC850
BC849
BC846
BC847, BC850
BC848, BC849
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
65
45
30
80
50
30
6.0
6.0
5.0
Unit
Vdc
100
mAdc
Vdc
Vdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage, Temperature Range
Symbol
PD
Max
Unit
225
1.8
mW
mW/ C
C/W
R qJA
556
PD
300
2.4
R qJA
417
mW
mW/ C
C/W
TJ,Tstg
-55 to +150
C
Device Marking
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;
BC848B;=1K; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
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BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
Electrical Characteristics
WE IT R ON
(TA=25 C Unless Otherwise noted)
Min
Typ
Max
Collector-Emitter Breakdown VoltageBC846A,B
V(BR)CEO
BC847A,B,C BC850B.C
(IC= 10mA)
BC848A,B,C BC849B,C
65
45
30
-
-
V
V(BR)CES
Collector-Emitter Breakdown VoltageBC846A,B
(IC=10 µA ,VEB=0)
BC847A,B,C BC850B.C
BC848A,B,C BC849B,C
80
50
30
-
-
V
Collector-Base Breakdown Voltage
(IC=10 µA)
BC846A,B
V(BR)CBO
BC847A,B,C BC850B.C
BC848A,B,C BC849B,C
80
50
30
-
-
V
Emitter-Base Breakdown Voltage
(IE=1.0 µA)
BC846A,B
V(BR)EBO
BC847A,B,C BC850B.C
BC848A,B,C BC849B,C
6.0
6.0
5.0
-
-
V
-
-
15
5.0
nA
mA
110
200
90
150
270
180
290
220
450
420
520
800
-
0.25
0.6
Characteristics
Symbol
Unit
Off Characteristics
Collector Cutoff Current (VCB=30V)
(VCB=30V, TA=150 C)
ICBO
On Characteristics
DC Current Gain
(IC= 10µA, VCE=5.0V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE
(IC= 2.0mA, VCE=5.0V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC849B. BC850B,
BC847C, BC848C, BC849C, BC850C
Collector-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
VCE(sat)
-
VBE(sat)
-
Base-Emitter On Voltage
(IC= 2.0mA, VCE=5.0V)
(IC= 10mA, VCE=5.0V)
VBE(on)
580
-
-0.7
-0.9
-
660
-
700
770
-
-
V
V
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 10mA, VCE= 5.0Vdc, f=100MHz)
Output Capacitance
(VCB= 10V, f=1.0MHz)
Noise Figure
(IC= 0.2mA, VCE= 5.0Vdc,
BC846A,B, BC847A,B,C, BC848A,B,C,
Rs=2.0 k W ,
BC849B,C, BC850B,C
f=1.0 kHz, BW=200Hz)
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fT
100
-
Cobo
-
-
4.5
MHz
pF
dB
NF
-
-
10
4.0
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
WE IT R ON
1.0
2.0
TA=25 C
0.9
VCE=10V
TA=25 C
1.5
V, VOLTAGE (VOLTS)
hFE,NORMALIZED DC CURRENT GAIN
BC847/BC848/BC849/BC850 Series
1.0
0.8
0.6
0.4
0.8
VBE(sat)@IC/BC=10
0.7
VBE(ON)@VCE= 10V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat)@IC/BC=10
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
0.1
200
2.0
1.6
IC= 200mA
1.2
IC=
10mA
0.4
0
IC= 100mA
IC=-50mA
IC= 20mA
0.02
0.1
1.0
10
20
Cib
3.0
1.0
0.4
Cob
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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40
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
C,CAPACITANCE (pF)
TA=25 C
2.0
5.0 7.0 10
20 30 50
70 100
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. Base-Emitter Temperature Coefficient
10
5.0
2.0 3.0
1.0
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
7.0
0.5 0.7 1.0
Firure2. "Saturation" And "On" Voltage
TA=25 C
0.8
0.2 0.3
IC, COLLECTOR CURRENT (mAdc)
qVB, TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
400
300
200
VCE=10V
TA= 25 C
100
80
60
40
30
20
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain- Bandwidth Product
50
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
WE IT R ON
1.0
TA=25 C
VCE=5V
TA=25 C
0.8
VBE(sat)@IC/IB=10
2.0
V,Voltage (Volts)
hFE, DC CURRENT GAIN (NORAMALIZED)
BC846 Series
1.0
0.5
0.6
[email protected]=-5.0V
0.4
0.2
0.2
VCE(sat)@IC/IB=10
0.1 0.2
1.0
10
0
100
IC, COLLECTOR CURRENT (mA)
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT(mA)
2.0
TA=25 C
1.6
20mA
50mA
100mA
200mA
1.2
0.8
0.4
IC=
10mA
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
1.0
1.4
1.8
qVB for VBE
-55 C to 125 C
2.2
2.6
3.3
20
0.2
0.5
1.0
IB, BASE CURRENT (mA)
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
C. CAPACTIANCE (pF)
TA=25 C
Cib
10
8.0
6.0
2.0
0.1
Cob
0.2
0.5
1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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5.0
10
20
50
100
Figure 10. Base-Emitter Temperature Coefficient
40
4.0
-2.0
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
20
200
Figure 8. "ON" Voltage
qVB TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7.DC Current Gain
100
50
100
500
VCE=5.0V
TA=25 C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12.Current-Gain-Bandwidth Product
200
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
SOT-23 Package Outline Dimensions
Unit:mm
A
B
T OP V IE W
E
G
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M 0.076 0.25
C
D
H
K
J
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L
M