VS-60CPH03PbF, VS-60CPH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 30 A FRED Pt® FEATURES Base common cathode • Hyperfast recovery time • Low forward voltage drop 2 • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC TO-247AC • Designed and JEDEC-JESD47 1 3 Anode Anode 2 1 2 Common cathode qualified according to • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTIONS/APPLICATIONS VS-60CPH03PbF, VS-60CPH03-N3 series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 30 A VR 300 V VF at IF 1.25 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Average rectified forward current TEST CONDITIONS VRRM Repetitive peak reverse voltage per leg total device Non-repetitive peak surge current per leg Operating junction and storage temperatures IF(AV) TC = 143 °C IFSM TJ = 25 °C TJ, TStg MAX. UNITS 300 V 30 60 A 300 - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 30 A MIN. TYP. MAX. 300 - - - 1.08 1.25 IF = 30 A, TJ = 125 °C - 0.92 1.00 VR = VR rated - 0.05 60 TJ = 125 °C, VR = VR rated - 20 300 UNITS V Reverse leakage current IR Junction capacitance CT VR = 300 V - 70 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 30-Sep-11 µA Document Number: 94500 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPH03PbF, VS-60CPH03-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time Peak recovery current trr IRRM MIN. TYP. MAX. - - 55 TJ = 25 °C - 39 - TJ = 125 °C - 57 - - 2.8 - - 7.5 - TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = - 200 A/μs VR = 200 V UNITS ns A TJ = 25 °C - 55 - TJ = 125 °C - 214 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.5 0.9 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.4 - - 6.0 - g - 0.22 - oz. 6.0 (5.0) - 12 (10) kgf cm (lbf in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Revision: 30-Sep-11 Case style TO-247AC °C/W 60CPH03 Document Number: 94500 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPH03PbF, VS-60CPH03-N3 www.vishay.com Vishay Semiconductors 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C 100 TJ = 175 °C TJ = 125 °C 10 TJ = 25 °C 1 0.2 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 50 100 150 200 250 300 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 50 100 150 200 250 300 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.01 0.001 0.00001 Single pulse (thermal resistance) 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 30-Sep-11 Document Number: 94500 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPH03PbF, VS-60CPH03-N3 www.vishay.com Vishay Semiconductors 50 45 Average Power Loss (W) Allowable Case Temperature (°C) 180 160 DC 140 Square wave (D = 0.50) Rated VR applied RMS limit 40 35 30 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 25 20 15 10 5 See note (1) 120 0 0 5 10 15 20 25 30 35 40 45 0 IF(AV) - Average Forward Current (A) 5 10 15 20 25 30 35 40 45 50 IF(AV) - Average Forward Current (A) Fig. 7 - Forward Power Loss Characteristics Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 80 1000 70 IF = 30 A, 125 °C 60 Qrr (nC) trr (ns) IF = 30 A, 125 °C 50 40 30 100 IF = 30 A, 25 °C IF = 30 A, 25 °C 20 10 100 1000 dIF/dt (A/µs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 10 100 1000 dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 30-Sep-11 Document Number: 94500 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPH03PbF, VS-60CPH03-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 30-Sep-11 Document Number: 94500 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CPH03PbF, VS-60CPH03-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 C P H 03 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: C = Common cathode 4 - Package: P = TO-247AC (modified) 5 - H = Hyperfast recovery 6 - Voltage code (03 = 300 V) 7 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-60CPH03PbF 25 500 PACKAGING DESCRIPTION Antistatic plastic tube VS-60CPH03-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 30-Sep-11 www.vishay.com/doc?95223 TO-247ACPbF www.vishay.com/doc?95226 TO-247AC-N3 www.vishay.com/doc?95007 Document Number: 94500 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000