Hittite HMC474SC70 Sige hbt gain block mmic amplifier, dc - 6 ghz Datasheet

HMC474SC70 / 474SC70E
v00.0607
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
Features
The HMC474SC70(E) is an ideal for:
Gain: 15 dB
• Cellular / PCS / 3G
P1dB Output Power: +8 dBm
• WiBro / WiMAX / 4G
Output IP3: +20 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
• CATV, Cable Modem & DBS
Single Supply: +3V to +10V
• Microwave Radio & Test Equipment
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC474SC70(E) is a general purpose SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifier covering DC to 6 GHz. This
industry standard SC70 packaged amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage with
up to +8 dBm output power. The HMC474SC70(E)
offers 15 dB of gain with a +20 dBm output IP3 at 850
MHz while requiring only 25 mA from a single positive
supply as low as +3V. The Darlington topology results
in reduced sensitivity to normal process variations
and excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifi cations, Vs= 5V, Rbias= 110 Ohm, TA = +25° C
Parameter
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
Gain
Gain Variation Over Temperature
Min.
Typ.
12
10
7
15
13
10
Max.
dB
dB
dB
DC - 6 GHz
0.01
Input Return Loss
DC - 5 GHz
5.0 - 6.0 GHz
15
14
dB
dB
Output Return Loss
DC - 5 GHz
5.0 - 6.0 GHz
15
12
dB
dB
Reverse Isolation
DC - 6 GHz
5
3
0.015
dB/ °C
17
dB
8
6
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 4.0 GHz
5.0 - 6.0 GHz
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 5 GHz
5.0 - 6.0 GHz
20
18
dBm
dBm
Noise Figure
DC - 5 GHz
5.0 - 6.0 GHz
3
3.9
dB
dB
Supply Current (Icq)
25
33
Note: Data taken with broadband bias tee on device output.
9 - 66
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Gain vs. Temperature
20
15
18
10
16
9
14
5
0
S21
S11
S22
-5
-10
12
10
8
6
-15
4
-20
2
-25
+25 C
+85 C
-40 C
0
0
1
2
3
4
5
6
7
8
0
1
FREQUENCY (GHz)
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
4
5
6
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
-15
-20
-25
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
-30
0
1
2
3
4
5
6
0
1
FREQUENCY (GHz)
2
3
4
5
6
5
6
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
8
7
-5
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
3
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
2
+25 C
+85 C
-40 C
-10
-15
-20
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
20
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
+25 C
+85 C
-40 C
6
5
4
3
2
1
-25
0
0
1
2
3
4
FREQUENCY (GHz)
5
6
0
1
2
3
4
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 67
HMC474SC70 / 474SC70E
v00.0607
Psat vs. Temperature
16
16
14
14
12
12
10
10
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
8
6
4
8
6
+25 C
+85 C
-40 C
4
+25 C
+85 C
-40 C
2
2
0
0
0
1
2
3
4
5
6
0
1
2
FREQUENCY (GHz)
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
24
22
20
18
+25 C
+85 C
-40 C
14
12
10
0
1
2
3
4
5
4
5
6
22
20
18
16
14
12
10
8
6
Gain
P1dB
Psat
OIP3
4
2
0
4.75
5
FREQUENCY (GHz)
Vs (Vdc)
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, RBIAS= 110 Ohms
28
+85 C
27
26
Icc (mA)
+25 C
25
24
-40 C
23
22
21
20
2
2.1
2.2
2.3
2.4
2.5
2.6
Vcc (V)
9 - 68
6
Gain, Power & OIP3 vs. Supply Voltage
for Rs= 110 Ohms @ 850 MHz
26
16
3
FREQUENCY (GHz)
Output IP3 vs. Temperature
IP3 (dBm)
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5.25
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
+6.0 Vdc
Collector Bias Current (Icc)
35 mA
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
+5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 4.3 mW/°C above 85 °C)
0.280 W
Thermal Resistance
(junction to lead)
232 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Collector Bias Voltage (Vcc)
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC474SC70
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC474SC70E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking
[1]
474
[2]
474
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 69
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Pin Descriptions
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5
GND
These pins must be connected to RF/DC ground.
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Recommended Bias Resistor Values
for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
3V
5V
6V
8V
10V
RBIAS VALUE
30 Ω
110 Ω
150 Ω
240 Ω
300 Ω
RBIAS POWER RATING
1/8 W
1/8 W
1/4 W
1/2 W
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
9 - 70
50
900
1900
2200
2400
3500
5200
5500
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
3.3 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Evaluation PCB
List of Materials for Evaluation PCB 117596 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 μF Capacitor, Tantalum
R1
110 Ohm Resistor, 1210 Pkg.
L1
18 nH Inductor, 0603 Pkg.
U1
HMC474SC70(E)
PCB [2]
117360 Evaluation PCB
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown. A sufficient
number of via holes should be used to connect
the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 71
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