SPICE MODELS: MBR1030 MBR1035 MBR1040 MBR1045 MBR1050 MBR1060 MBR1030 - MBR1060 10A SCHOTTKY BARRIER RECTIFIER Features · · Schottky Barrier Chip · · · · Low Power Loss, High Efficiency · Lead Free Finish, RoHS Compliant (Note 3) Guard Ring Die Construction for Transient Protection TO-220AC L High Surge Capability B High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application M C D K A Mechanical Data Pin 1 · · Case: TO-220AC · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Polarity: See Diagram Pin 2 E Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 G J N Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 R P Pin 1 Pin 2 Marking: Type Number Case Weight: 2.24 grams (approx.) Dim Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 J 0.69 0.93 K 3.54 3.78 L 4.07 4.82 M 1.15 1.39 N 0.30 0.50 P 2.04 2.79 R 4.83 5.33 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TC = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop MBR 1030 MBR 1035 MBR 1040 MBR 1045 MBR 1050 MBR 1060 Unit VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 24.5 28 31.5 35 42 V IO 10 A IFSM 150 A @ IF = 10A, TC = 25°C @ IF = 10A, TC = 125°C VFM 0.84 0.57 0.95 0.70 V @TC = 25°C @TC = 125°C IRM 0.1 15 0.1 25 mA Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: Symbol CT 400 pF RqJc 2.5 °C/W dV/dt 1000 V/ms Tj, TSTG -65 to +150 °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23009 Rev. 9 - 2 1 of 3 www.diodes.com MBR1030-MBR1060 ã Diodes Incorporated 50 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD CURRENT (A) 10 8 6 4 2 MBR1030 - MBR1045 10 MBR1050 / MBR1060 1.0 0 0.1 0 50 100 150 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 300 1000 Tj = 25° C f = 1.0MHz 250 CT, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 200 150 100 50 100 0 1 10 0.1 100 1.0 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 10 10 Tj = 125° C 1.0 Tj = 75° C 0.1 Tj = 25° C 0.01 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23009 Rev. 9 - 2 2 of 3 www.diodes.com MBR1030-MBR1060 Ordering Information (Note 4) Device Packaging Shipping MBR10xx* TO-220AC 50/Tube * xx = Device type, e.g. MBR1045 Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS23009 Rev. 9 - 2 3 of 3 www.diodes.com MBR1030-MBR1060