1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Plastic Material: UL Flammability Classification Rating 94V-0 B A A C D DO-41 Plastic Dim Min Max Mechanical Data A 25.40 ¾ · · B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.3 grams (approx) Mounting Position: Any Marking: Type Number All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TL = 90°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (Note 2) Peak Reverse Leakage Current at Rated DC Blocking Voltage (Note 2) Symbol 1N5817 1N5818 1N5819 Unit VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V IO 1.0 A IFSM 25 A @ IF = 1.0A @ IF = 3.0A VFM @TA = 25°C @ TA = 100°C IRM 1.0 10 mA pF 0.450 0.750 0.550 0.875 CT 110 Typical Thermal Resistance Junction to Lead (Note 4) RqJL 15 Typical Thermal Resistance Junction to Ambient RqJA 50 Tj, TSTG -65 to +125 Typical Total Capacitance (Note 3) Operating and Storage Temperature Range Notes: 0.60 0.90 V °C/W °C 1. Measured at ambient temperature at a distance of 9.5mm from the case. 2. Short duration test pulse used to minimize self-heating effect. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm) copper pads. DS23001 Rev. 6 - 2 1 of 2 www.diodes.com 1N5817-1N5819 1.0 IF, NSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE OUTPUT CURRENT (A) 30 0.8 0.6 0.4 0.2 Single Pulse Half-Wave 60 Hz Resistive or Inductive Load 0 10 40 60 80 100 120 1N5817 10 1N5818 1N5819 1.0 Tj = 25ºC Pulse Width = 300 ms 2% Duty Cycle 0.1 140 150 1.0 1.5 2.0 2.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 25 Tj = 25ºC f = 1MHz Vsig = 50mV p-p CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.5 0 TL, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 20 15 10 100 5 8.3ms Single Half Sine-Wave JEDEC Method 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current DS23001 Rev. 6 - 2 2 of 2 www.diodes.com 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance 1N5817-1N5819