Central CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP TM Semiconductor Corp. ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT3904E (two single NPN), CMLT3906E (two single PNP), and CMLT3946E (one each NPN and PNP complementary) are combinations of enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications. ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V min to 60V min. (PNP) ♦ BVEBO from 5.0V min to 6.0V min. (PNP) ♦ VCE(SAT) from 0.3V max to 0.2V max. (NPN), from 0.4V max to 0.2V max. (PNP) ♦ hFE from 60 min to 70 min. (NPN/PNP) SOT-563 CASE MARKING CODES: CMLT3904E: CMLT3906E: CMLT3946E: MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage L04 L06 L46 SYMBOL UNITS ♦ Collector-Emitter Voltage VCBO 60 V VCEO 40 V Emitter-Base Voltage ♦ VEBO 6.0 V Collector Current IC 200 mA Power Dissipation Power Dissipation Power Dissipation Operating and Storage Junction Temperature PD PD PD 350 300 150 mW (Note 1) mW (Note 2) mW (Note 3) TJ, Tstg -65 to +150 °C ΘJA 357 °C/W Thermal Resistance ♦ ♦ ♦ ♦ ♦ ♦ ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN PNP SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE TYP 90 55 7.9 0.050 0.100 0.75 0.85 130 150 TEST CONDITIONS VCE=30V, VEB=3.0V IC=10µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA MIN 60 40 6.0 0.65 90 100 TYP 115 60 7.5 0.057 0.100 0.75 0.85 240 235 MAX 50 0.100 0.200 0.85 0.95 UNITS nA V V V V V V V ♦ Enhanced specification. Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2 R2 (13-December 2003) Central CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP TM Semiconductor Corp. ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS (continued) SYMBOL TEST CONDITIONS hFE VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA ♦ hFE hFE VCE=1.0V, IC=100mA fT VCE=20V, IC=10mA, f=100MHz Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V,IC=100µA, RS =1.0KΩ, f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA MIN 100 70 30 300 NPN TYP 215 110 50 PNP TYP 150 120 55 1.0 0.1 100 1.0 MAX 300 UNITS MHz pF pF kΩ X10-4 4.0 8.0 12 10 400 60 4.0 µmhos dB 35 35 200 50 ns ns ns ns ♦ Enhanced specification. SOT-563 - MECHANICAL OUTLINE D E A 6 E 5 4 B G 1 C F 3 2 H R0 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 CMLT3904E MARKING CODE: L04 CMLT3906E CMLT3946E MARKING CODE: L06 MARKING CODE: L46 R2 (13-December 2003)