DIODES BAS20

BAS20
General Purpose High Voltage Diode
Connection Diagram
3
3
3
A81.
2
1
1
2
1
MARKING
SOT-23
Absolute Maximum Ratings *
Symbol
2.NC
T A = 25°C unless otherwise noted
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
200
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
TSTG
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature
-55 to +150
°C
Value
Units
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
350
mW
RqJA
Thermal Resistance, Junction to Ambient
357
°C/W
Electrical Characteristics
Symbol
TA=25°C unless otherwise noted
Parameter
Test Conditions
Min.
Max.
VR
Breakdown Voltage
IR = 100mA
VF
Forward Voltage
IF = 100mA
IF = 200mA
1.0
1.25
V
V
IR
Reverse Leakage
V R =50V
V R =50V, TA = 150°C
100
100
nA
mA
CT
Total Capacitance
V R = 0V, f = 1.0MHz
5
pF
trr
Reverse Recovery Time
IF = IR =30mA,
IRR = 3.0mA, RL = 100W
50
ns
© 2007 Fairchild Semiconductor Corporation
BAS20 Rev. 1.0.0
200
Units
V
www.fairchildsemi.com
1
BAS20 — General Purpose High Voltage Diode
April 2008
BAS20 — General Purpose High Voltage Diode
Mechanical Dimensions
SOT-23
© 2007 Fairchild Semiconductor Corporation
BAS20 Rev. 1.0.0
www.fairchildsemi.com
2
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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First Production
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Rev. I31
© 2008 Fairchild Semiconductor Corporation
BAS20 Rev. A1
www.fairchildsemi.com
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BAS20 General Purpose High Voltage Diode
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