MPSA92
PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR
Features
·
·
·
Epitaxial Planar Die Construction
-300V Collector-Emitter Voltage
Complimentary NPN Type Available
(MPSA42)
E
A
Mechanical Data
·
·
·
·
·
C
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Type Number
Weight: 0.18 grams (approx.)
Maximum Ratings
TO-92
B
D
E B C
BOTTOM
VIEW
H
G
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
H
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
MPSA42
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-100
mA
Pd
625
mW
Collector Current - Continuous
Power Dissipation
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
200
K/W
RqJC
83.3
K/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
-300
¾
V
Collector to Base Breakdown Voltage
V{BR}CBO
-300
¾
V
IC = -100 mA, IE = 0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -100mA, IC = 0
Collector Cutoff Current
ICBO
¾
-0.25
mA
VCB = -200V, IE = 0
Emitter Cutoff Current
IEBO
¾
-0.10
mA
VEB = -3.0V, IC = 0
Collector to Emitter Breakdown Voltage
(Note 2)
Test Condition
IC = -1.0mA, IB = 0
DC Current Gain
(Note 2)
hFE
25
40
25
¾
¾
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
Collector-Emitter Saturation Voltage
(Note 2)
VCE(SAT)
¾
-0.5
V
IC = -20mA, IB = -2.0mA
Base-Emitter Saturation Voltage
(Note 2)
VBE(SAT)
¾
-0.9
V
IC = -20mA, IB = -2.0mA
fT
50
¾
MHz
Ccb
¾
6.0
pF
Current Gain Bandwidth Product
Collector to Base Capacitance
Notes:
IC = -10mA, VCE = -20V, f = 100MHz
VCB = -20V, IE = 0, f = 1.0MHz
1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient.
2. Pulse Test: Pulse width £ 300ms, duty cycle £ 2%.
DS11206 Rev. G-3
1 of 1
MPSA92