ON MMBTA55LT1 Driver transistors(pnp silicon) Datasheet

MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1 is a Preferred Device
Driver Transistors
PNP Silicon
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Features
• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Value
Unit
VCEO
MMBTA55
MMBTA56
Collector −Base Voltage
1
BASE
Vdc
−60
−80
VCBO
2
EMITTER
Vdc
−60
−80
MMBTA55
MMBTA56
3
Emitter −Base Voltage
Collector Current − Continuous
VEBO
−4.0
Vdc
IC
−500
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
2H X
2GM X
MMBTA55LT1
MMBTA56LT1
2H, 2GM = Specific Device Code
X
= Date Code
ORDERING INFORMATION
Package
Shipping†
MMBTA55LT1
SOT−23
3000/Tape & Reel
MMBTA55LT3
SOT−23
10,000/Tape & Reel
MMBTA56LT1
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
Device
MMBTA56LT1G
MMBTA56LT3
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 3
1
Publication Order Number:
MMBTA55LT1/D
MMBTA55LT1, MMBTA56LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
−60
−80
−
−
V(BR)EBO
−4.0
−
Vdc
ICES
−
−0.1
Adc
−
−
−0.1
−0.1
100
100
−
−
OFF CHARACTERISTICS
V(BR)CEO
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
Vdc
MMBTA55
MMBTA56
Emitter −Base Breakdown Voltage
(IE = −100 Adc, IC = 0)
Collector Cutoff Current
(VCE = −60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
(VCB = −80 Vdc, IE = 0)
Adc
ICBO
MMBTA55
MMBTA56
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −100 mAdc, IB = −10 mAdc)
VCE(sat)
−
−0.25
Vdc
Base −Emitter On Voltage
(IC = −100 mAdc, VCE = −1.0 Vdc)
VBE(on)
−
−1.2
Vdc
fT
50
−
MHz
−
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN−ON TIME
VCC
−1.0 V
5.0 s
100
+40 V
+40 V
RL
100
OUTPUT
+10 V
tr = 3.0 ns
RB
Vin
* CS 6.0 pF
5.0 F
RL
OUTPUT
RB
Vin
0
TURN−OFF TIME
VCC
+VBB
* CS 6.0 pF
5.0 F
100
100
5.0 s
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
MMBTA55LT1, MMBTA56LT1
200
100
VCE = −2.0 V
TJ = 25°C
50
C, CAPACITANCE (pF)
100
70
50
30
20
−2.0 −3.0
−5.0 −7.0 −10
−20 −30
−50 −70 −100
20
Cobo
10
5.0
−0.1 −0.2
−200
−0.5 −1.0
−2.0
−5.0
−10 −20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
−50 −100
400
TJ = 125°C
VCE = −1.0 V
h FE, DC CURRENT GAIN
ts
200
100
70
50
tf
VCC = −40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
−5.0 −7.0 −10
−20 −30
200
25°C
−55°C
100
80
60
tr
td @ VBE(off) = −0.5 V
−50 −70 −100
−200 −300
40
−0.5 −1.0 −2.0
−500
−5.0 −10
−20
−50
−100 −200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
Figure 5. DC Current Gain
−1.0
TJ = 25°C
−0.8
V, VOLTAGE (VOLTS)
20
30
IC, COLLECTOR CURRENT (mA)
300
30
Cibo
7.0
1.0 k
700
500
t, TIME (ns)
TJ = 25°C
70
VBE(sat) @ IC/IB = 10
−0.6
VBE(on) @ VCE = −1.0 V
−0.4
−0.2
VCE(sat) @ IC/IB = 10
0
−0.5
−1.0 −2.0
−5.0
−10
−20
−50
−100 −200
IC, COLLECTOR CURRENT (mA)
Figure 6. “ON” Voltages
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3
−500
−500
−1.0
R VB , TEMPERATURE COEFFICIENT (mV/° C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
MMBTA55LT1, MMBTA56LT1
TJ = 25°C
−0.8
IC =
−100 mA
IC =
−50 mA
IC =
−250 mA
IC =
−500 mA
−0.6
−0.4
−0.2
IC =
−10 mA
0
−0.05 −0.1 −0.2
−0.5
−1.0
−2.0
−5.0
−10
−20
−50
−0.8
−1.2
−1.6
−2.0
RVB for VBE
−2.4
−2.8
−0.5 −1.0 −2.0
−5.0
−10
−20
−50
−100 −200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base−Emitter Temperature
Coefficient
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4
−500
MMBTA55LT1, MMBTA56LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MMBTA55LT1, MMBTA56LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MMBTA55LT1/D
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