Diotec BCF32 Surface mount si-epitaxial planartransistor Datasheet

BCF 32, BFC 33
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
1.3 ±0.1
2.5 max
3
Type
Code
2
1
250 mW
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
NPN
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCF 32, BCF 33
Collector-Emitter-voltage
B open
VCE0
32 V
Collector-Base-voltage
E open
VCB0
32 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (DC)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
100 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 32 V
ICB0
–
–
100 nA
IE = 0, VCB = 32 V, Tj = 100/C
ICB0
–
–
10 :A
IEB0
–
–
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
2
Collector saturation volt. – Kollektor-Sättigungsspg. )
1
IC = 10 mA, IB = 0.5 mA
VCEsat
–
120 mV
250 mV
IC = 100 mA, IB = 5 mA
VCEsat
–
210 mV
–
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
20
01.11.2003
General Purpose Transistors
BCF 32, BCF 33
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
VBEsat
–
750 mV
–
IC = 50 mA, IB = 2.5 mA
VBEsat
–
850 mV
–
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 5 V, IC = 10 :A
VCE = 5 V, IC = 2 mA
BCF 32
hFE
–
150
–
BCF 33
hFE
–
270
–
BCF 32
hFE
200
–
450
BCF 33
hFE
420
–
800
VBEon
550 mV
–
700 mV
fT
100 MHz
–
–
CCB0
–
2.5 pF
–
F
–
1.2 dB
4 dB
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 2 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking – Stempelung
420 K/W 2)
BCF 29, BCF 30
BCF 32 = D7
BCF 33 = D8
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
21
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