ETC1 FMBB914 200 mw epitaxial planar diode Datasheet

200 mW EPITAXIAL
PLANAR DIODES
FMBB914
Data Sheet
Mechanical Dimensions
Description
.110
.060
Pin 3
3
Pin 2 NC
.037
.115
.037
1
2
Pin 1
.016
1
3
2
.043
.016
.004
Features
n PLANAR PROCESS
n INDUSTRY STANDARD SOT-23
PACKAGE
n 200 mW POWER DISSIPATION
n MEETS UL SPECIFICATION 94V-0
FMBB914
Units
FMBB914
80
80
Volts
Volts
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
Average Forward Rectified Current...IO
............................................. 100 ............................................... mAmps
Non-Repetitive Peak Forward Surge Current...IFSM
............................................. 4.0 ...............................................
Power Dissipation...PD
.........................................
Operating Temperature Range...TJ
......................................... -25 to 85 ..........................................
°C
Storage Temperature Range...TSTRG
......................................... -55 to 125 ..........................................
°C
............................................. 1.2 ...............................................
Volts
............................................. 0.1 ...............................................
µAmps
Maximum Frequency...f
............................................. 100 ...............................................
MHz
Maximum Diode Capacitance...CD
............................................. 3.5 ...............................................
pF
Maximum Reverse Recovery Time...tRR
............................................. 4.0 ...............................................
ns
200
..........................................
Amps
mW
Electrical Characteristics
Maximum Forward Voltage...VF
@ IF = 100 mA
Maximum DC Reverse Current...IR
@ VR = 70V
.01 uF
PVV = 100ns
Device Under TTest
est
50 Ohms
RG = 50 Ohms
Page 10-22
Trr
IF
5K Ohms
Output
IR
0.1 IR
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